CD4148 SS | Alldatasheet

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100V 0.3A Fast Switching Diode - CD4148 Small-Signal high speed switching diode in bare die form  Fast Switching Speed 350 x 350 13.78 x 13.78 µm Die Size (Unsawn) mils Anode Pad Size 110 Ø 2.8 Ø µm mils Die Thickness 230 (±15) 9.05 (±0.59)  High conductance  General purpose switching applications  High reliability tested grades. Rev 1.0 22/01/19 Features: Die Dimensions in µm (mils) 110 (3) ANODE 350 (14)  No suffix - MIL-STD-750 /2073 Visual Inspection  “ H” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class H LAT  “ K” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification Supply Formats: Mechanical Specification  Default – Die in Waffle Pack (400 per tray capacity)  Sawn Wafer on Tape – By specific request 230 (9.05) ANODE CHIP BACKSIDE IS CATHODE The following part suffixes apply:

Ordering Information

 Unsawn Wafer – By specific request µm mils Top Metal Composition Al  Die Thickness <> 230µm( 9 Mils) – On request  With additional electrical selection – On request Back Metal Composition AuAs Page 1 of 3 www.siliconsupplies.com All d ata sheet.com

100V 0.3A Fast Switching Diode - CD4148 Absolute Maximum Ratings1 TJ = 25°C unless otherwise stated PARAMETER SYMBOL Rev 1.0 22/01/19 VALUE UNIT Non-repetitive Peak Reverse Voltage VRSM 105 V Repetitive Peak Reverse Voltage VRRM 100 V Average Rectified Forward Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current If 400 mA Pulse width 1s

1 Non-repetitive

Peak forward surge current IFSM Pulse width 1µs 4 A Power Dissipation PD Electrical Characteristics TJ = 25°C unless otherwise stated 200 mW Operating Junction temperature TJ -55 to 175 °C Storage Temperature Range TSTG -65 to 200 °C 1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT IR = 100µA 100 - - V Breakdown Voltage VR IR = 5µA 75 - - V IF = 5mA - - 0.72 IF = 20mA - - 1 Forward Voltage2 VF V IF = 100mA - - 1 VR = 20V - - 0.025 VR = 20V, TJ = 150°C - - 50 VR = 75V - - 5 Reverse Leakage IR VR = 100V - - 10 µA Total Capacitance CT V R = 0V, f = 1MHz - - 4 pF Reverse Recovery Time trr IF = 10mA, VR = 6V (600mA) Irr = 1mA, RL = 100Ω - - 4 ns 2. Pulse Width = 8.3ms, Non-recurrent square wave Page 2 of 3 www.siliconsupplies.com All d ata sheet.com