CAT6219 CATALYST | Alldatasheet
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Technical content
© 2007 Catalyst Semiconductor, Inc. 1 Doc. No. 10009 Rev. A Characteristics subject to change without notice 500mA CMOS LDO Regulator
FEATURES
Guaranteed 500mA peak output current Low dropout voltage of 300mV typical at 500mA Stable with ceramic output capacitor External 10nF bypass capacitor for low noise Quick-start feature Under voltage lockout No-load ground current of 55μA typical Full-load ground current of 85μA typical ±1.0% output voltage initial accuracy ±2.0% accuracy over temperature “Zero” current shutdown mode Current limit and thermal protection 5-lead thin SOT-23 and 6-lead TDFN packages
APPLICATIONS
Cellular phones Battery-powered devices Consumer Electronics
DESCRIPTION
The CAT6219 is a 500mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. The quick-start feature allows the use of an external bypass capacitor to reduce the overall output noise without affecting the turn-on time of just 150μs. With zero shutdown current and low ground current of 55μA typical, the CAT6219 is ideal for battery- operated devices with supply voltages from 2.3V to 5.5V. An internal under voltage lockout circuit disables the output at supply voltages under 2.15V typical. The CAT6219 offers 1% in itial accuracy and low dropout voltage, 300mV typical at 500mA. Stable operation is provided with a small value ceramic capacitor, reducing required board space and compo- nent cost. Other features include current limit and thermal protection. The device is available in the low profile (1mm max height) 5-lead thin SOT23 and in the 6-lead 2mm x 2mm TDFN packages. For Ordering Information details, see page 9. PIN CONFIGURATION TYPICA L APPLICATION CIRCUIT 5-Lead Thin SOT-23 6-Lead TDFN (1mm height) (2mm x 2mm) Top View Top View VIN CAT6219 BYPEN VOUT GND OFF ON VIN 1µF 2.3V to 5.5V CIN VOUT 2.2µF COUT 10nF CBYP (Optional) VOUT EN BYP VIN GND CAT6219 BYP VIN 3 VOUT NC5 EN GND 2
Doc. No. 10009 Rev. A 2 © 2007 Catalyst Semiconductor, Inc. pull-down resistor is provided.
4 BYP
Figure 2. CAT6219 Functional Block Diagram assures that if EN pin is left open, the circuit is disabled. its value can be increased to 4.7μF. capacitor in the no-load condition. must be connected to the ground plane on the PCB. Typical application circuit with external components is shown on page 1. (1) Exceeding maximum rating may damage the device. allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. (3) The device is not guaranteed to work outside its operating rating.
© 2007 Catalyst Semiconductor, Inc. 3 Doc. No. 10009 Rev. A Characteristics subject to change without notice ELECTRICAL OPERATING CHARACTERISTICS (1) VIN = V OUT + 1.0V, V EN = High, I OUT = 100 μA, C IN = 1µF, C OUT = 2.2µF, ambient temperature of 25ºC (over recommended operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range. Symbol Parameter Conditions Min Typ Max Unit -1.0 +1.0 VOUT-ACC Output Voltage Accuracy Initial accuracy -2.0 +2.0 TCOUT Output Voltage Temp. Coefficient 40 ppm/ºC -0.4 +0.4 %/V 1 1.5 VR-LOAD Load Regulation I OUT = 100μA to 500 mA 300 400 VDROP Dropout Voltage (2) I OUT = 500mA 500 mV 55 75 IOUT = 0μA
90 IGND Ground Current
IOUT = 500mA 85 μA 1 IGND-SD Shutdown Ground Current V EN < 0.4V μA f = 1kHz, CBYP = 10nF 64 PSRR Power Supply Rejection Ratio f = 20kHz, CBYP = 10nF 54 dB ISC Output short circuit current limit V OUT = 0V 600 800 mA TON Turn-On Time C BYP = 10nF 150 μs eN Output Noise Voltage (3) BW = 10Hz to 100kHz 45 μVrms ROUT-SH Shutdown Switch Resistance 250 Ω REN Enable pull-down resistor 2.5 M Ω VIN-UVLO Under voltage lockout threshold 2.15 V ESR C OUT equivalent series resistance 5 500 m Ω Enable Input VHI Logic High Level V IN = 2.3 to 5.5V 1.8 V VLO Logic Low Level V IN = 2.3 to 5.5V 0.4 V VEN = 0.4V 0.15 1 IEN Enable Input Current VEN = VIN 1.5 4 μA Thermal Protection TSD Thermal Shutdown 160 ºC THYS Thermal Hysteresis 10 ºC Notes: (1) Specification for 2.85V output version unless specified otherwise. (2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. During test, the input voltage stays always above the minimum 2.3V. (3) Specification for 1.8V output version.
Doc. No. 10009 Rev. A 4 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 2.75 2.80 2.85 2.90 2.95 0 50 100 150 200 250 300 350 400 450 500 OUTPUT LOAD CURRENT (mA) OUTPUT VOLTAGE (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE (V) OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS (shown for 2.85V output version) VIN = 3.85V, IOUT = 100μA, CIN = 1µF, COUT = 2.2μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Dropout Characteristics Line Regulation 2.82 2.83 2.84 2.85 2.86 2.87 2.5 3 3.5 4 4.5 5 5.5 INPUT VOLTAGE (V) OUTPUT VOLTAGE (V) Load Regulation Output Voltage vs. Temperature Ground Current vs. Load Current 100 0 50 100 150 200 250 300 350 400 450 500 OUTPUT LOAD CURRENT (mA) GROUND CURRENT (µA) Ground Current vs. Temperature -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (ºC) GROUND CURRENT (µA) 500mA 0.1mA 2.82 2.83 2.84 2.85 2.86 2.87 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (ºC) OUTPUT VOLTAGE (V)
© 2007 Catalyst Semiconductor, Inc. 5 Doc. No. 10009 Rev. A Characteristics subject to change without notice FREQUENCY [Hz] PSRR [dB] TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = 1µF, COUT = 2.2μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Output Short-circuit Current vs. Input Voltage 100 200 300 400 500 600 700 800 900 1000 012345 INPUT VOLTAGE (V) CURRENT LIMIT (mA) Ground Current vs. Input Voltage INPUT VOLTAGE (V) GROUND CURRENT (µA) Dropout vs. Temperature (500mA Load) 200 250 300 350 400 450 500 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 500mA DROPOUT VOLTAGE (mV) Dropout vs. Load Current 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 OUTPUT LOAD CURRENT (mA) DROPOUT VOLTAGE (mV) Enable Threshold vs. Input Voltage 0.4 0.8 1.2 1.6 22 . 533 . 544 . 555 . 5 INPUT VOLTAGE (V) ENABLE THRESHOLD (V) PSRR vs. Frequency (10mA Load) VOUT = 0 CBYP = 10nF CBYP = 0
Doc. No. 10009 Rev. A 6 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice TRANSIENT CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = 1µF, COUT = 2.2μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Enable Turn-On (100μA Load) Enable Turn-Off (100μA Load) Enable Turn-On (500mA Load) Enable Turn-Off (500mA Load) Line Transient Response (3.85V to 4.85V) Load Transient Response (0.1mA to 500mA)
© 2007 Catalyst Semiconductor, Inc. 7 Doc. No. 10009 Rev. A Characteristics subject to change without notice PACKAGE OUTLINES 5-LEAD TSOT-23 Notes: (1) All dimensions are in millimeters, angles in degrees. (2) REFER JEDEC MO-193. SYMBOL MIN NOM MAX A — — 1.00 A1 0.01 0.05 0.10 A2 0.80 0.87 0.90 b 0.30 — 0.45 c 0.12 0.15 0.20 D 2.90 BSC E 2.80 BSC E1 1.60 BSC e 0.95 BSC e1 1.90 BSC L 0.30 0.40 0.50 L1 0.60 REF L2 0.25 BSC θ 0º 8º For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. A2 A D e b E e GAUGE PLANE L c θ
Doc. No. 10009 Rev. A 8 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice PACKAGE OUTLINES 6-LEAD TDFN (2mm x 2mm) Notes: (1) All dimensions are in millimeters, angles in degrees. (2) REFER JEDEC MO-229. For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. SYMBOL MIN NOM MAX A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A3 0.20 REF b 0.25 0.30 0.35 D 1.90 2.00 2.10 D2 1.50 1.60 1.70 E 1.90 2.00 2.10 E2 0.90 1.00 1.10 e 0.65 TYP L 0.16 0.25 0.35
© 2007 Catalyst Semiconductor, Inc. 9 Doc. No. 10009 Rev. A Characteristics subject to change without notice EXAMPLE OF ORDERING INFORMATION Ordering Number V OUT Voltage(5) Package Quantity per Reel CAT6219-180TD-GT3 1.80V TSOT-23 3000 CAT6219-285TD-GT3 2.85V TSOT-23 3000 CAT6219-330TD-GT3 3.30V TSOT-23 3000 Notes: (1) All packages are RoHS-comp liant (Lead-free, Halogen-free). (2) The standard lead finish is NiPd Au pre-plated (PPF) lead frames. (3) The device used in the above example is a CAT6219-285TD-GT3 (VOUT = 2.85V, in a TSOT-23 package, NiPdAu, Tape and Reel, 3000 units). (4) Standard voltages are 1.80V, 2.85V and 3.30V. For other voltage options, please contact your n earest Catalyst Semiconductor Sales office. (5) All output voltage options have the same marking. (6) Contact factory for availability. (7) Package Marking for CAT6219 family is “RV.” Prefix Device # Suffix CAT 6219 -285 TD -G T3 Product Number 6219 VOUT Voltage (4) 180: 1.80V 285: 2.85V 330: 3.30V Company ID Package TD: TSOT-23 VP5 : TDFN-6 (6) Lead Finish G: NiPdAu Tape & Reel T: Tape & Reel 3: 3000 Units/Reel (TSOT-23) 4: 4000 Units/Reel (TDFN)
Doc. No. 10009 Rev. A 10 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice
REVISION HISTORY
Date Rev. Reason 04/20/2007 A Initial Release Copyrights, Trademarks and Patents Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™ and Quad-Mode™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GU ARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRO DUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARIS ING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgica l implant into the body, or other applications intended to support or sustain life, or for any ot her application in which the failure of the Catalyst Semiconduct or product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or se rvice described herein without not ice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the rele vant product informati on before placing order s. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters
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Santa Clara, CA 95054 Phone: 408.542.1000 Document No: 10009 Fax: 408.542.1200 Revision: A www.catsemi.com Issue date: 04/20 /07