CAT6218_08 CATALYST | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
© Catalyst Semiconductor, Inc. 1 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice 300mA CMOS LDO Regulator
FEATURES
Guaranteed 300mA output current Low dropout voltage of 180mV typical at 300mA Stable with 1μF ceramic output capacitor External 10nF bypass capacitor for low noise Quick-start feature No-load ground current of 55μA typical Full-load ground current of 80μA typical ±1.0% initial accuracy (VOUT ≥ 2.0V) ±2.0% accuracy over temperature (VOUT ≥ 2.0V) “Zero” current shutdown mode Fold-back current limit and under-voltage lockout Thermal protection Thin SOT23-5 package
APPLICATIONS
Cellular phones Battery-powered devices Consumer Electronics
DESCRIPTION
The CAT6218 is a 300mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. The quick-start feature allows the use of an external bypass capacitor to reduce the overall output noise without affecting the turn-on time of just 150μs. With zero shutdown current and low ground current of 55μA typical, the CAT6218 is ideal for battery- operated devices with supply voltages from 2.3V to 5.5V. An internal under voltage lockout circuit disables the output at supply voltages under 2.1V typical. The CAT6218 offers 1% in itial accuracy and low dropout voltage, 180mV typical at 300mA. Stable operation is provided with a small value ceramic capacitor, reducing required board space and compo– nent cost. Other features include fold-back current current limit and thermal protection. The device is available in the low profile (1mm max height) 5-lead thin SOT23 package. PIN CONFIGURATION TSOT-23 5-Lead (1mm height) VOUT EN BYP VIN GND Top View TYPICAL APPLICATION CIRCUIT For Ordering Information details, see page 9. VIN CAT6218 BYPEN VOUT GND OFF ON VIN 1µF 2.3V to 5.5V CIN VOUT 1µF COUT 10nF CBYP (Optional)
Doc. No. MD-10010 Rev. C 2 © Catalyst Semiconductor, Inc. pull-down resistor is provided.
4 BYP
Figure 2. CAT6218 Functional Block Diagram assures that if EN pin is left open, the circuit is disabled. its value can be increased to 4.7μF. capacitor in the no-load condition. must be connected to the ground plane on the PCB. Typical application circuit with external components is shown on page 1. power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. (3) The device is not guaranteed to work outside its operating rating.
© Catalyst Semiconductor, Inc. 3 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice ELECTRICAL OPERATING CHARACTERISTICS (1) VIN = VOUT + 1.0V, VEN = High, IOUT = 100μA, CIN = COUT = 1µF, ambient temperature of 25ºC (over recommended operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range. Symbol Parameter Conditions Min Typ Max Unit -1.0 +1.0 VOUT-ACC Output Voltage Accuracy Initial accuracy for VOUT ≥ 2.0V (4) -2.0 +2.0 TCOUT Output Voltage Temp. Coefficient 40 ppm/ºC -0.4 +0.4 %/V 0.7 1.2 VR-LOAD Load Regulation I OUT = 100μA to 300 mA 1.5 180 250 VDROP Dropout Voltage (2) I OUT = 300mA 300 mV 55 75 IOUT = 0μA
90 IGND Ground Current
IOUT = 300mA 80 μA 1 IGND-SD Shutdown Ground Current V EN < 0.4V μA f = 1kHz, CBYP = 10nF 64 PSRR Power Supply Rejection Ratio f = 20kHz, CBYP = 10nF 54 dB ISC Output short circuit current limit V OUT = 0V 180 mA TON Turn-On Time C BYP = 10nF 150 μs eN Output Noise Voltage (3) BW = 10Hz to 100kHz 45 μVrms ROUT-SH Shutdown Switch Resistance 250 Ω REN Enable pull-down resistor 2.5 M Ω VUVLO Under-voltage lock out (UVLO) threshold 2.1 V ESR C OUT equivalent series resistance 5 500 m Ω Enable Input VIN = 2.3 to 5.5V 1.8 VHI Logic High Level VIN = 2.3 to 5.5V, 0ºC to +125ºC junction temperature 1.6 V VLO Logic Low Level V IN = 2.3 to 5.5V 0.4 V VEN = 0.4V 0.15 1 IEN Enable Input Current VEN = VIN 1.5 4 μA Thermal Protection TSD Thermal Shutdown 160 ºC THYS Thermal Hysteresis 10 ºC Notes: (1 Specification for 2.85V output version unless specified otherwise. (2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. During test, the input voltage stays always above the minimum 2.3V. (3) Specification for 1.8V output version. (4) For V OUT < 2.0V, the initial accuracy is ±2% and across temperature ±3%.
Doc. No. MD-10010 Rev. C 4 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice TYPICAL CHARACTERISTICS (shown for 2.85V output version) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Dropout Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE [V] OUTPUT VOLTAGE [V] 100μA 300mA Line Regulation 2.82 2.83 2.84 2.85 2.86 2.87 INPUT VOLTAGE [V] OUTPUT VOLTAGE [V] Load Regulation 2.75 2.80 2.85 2.90 2.95 0 50 100 150 200 250 300 OUTPUT LOAD CURRENT [mA] OUTPUT VOLTAGE [V] Output Voltage vs. Temperature 2.82 2.83 2.84 2.85 2.86 2.87 -40 -10 20 50 80 110 140 TEMPERATURE [°C] OUTPUT VOLTAGE [V] Ground Current vs. Load Current 100 0 25 50 75 100 125 150 OUTPUT LOAD CURRENT [mA] GROUND CURRENT [μA] Ground Current vs. Temperature -40 -10 20 50 80 110 140 TEMPERATURE [°C] GROUND CURRENT [μA]
© Catalyst Semiconductor, Inc. 5 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Output Voltage vs. Load Current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 OUTPUT LOAD CURRENT [mA] OUTPUT VOLTAGE [V] Ground Current vs. Input Voltage INPUT VOLTAGE [V] GROUND CURRENT [μA] Dropout vs. Temperature (300mA Load) 100 150 200 250 300 350 -40 -10 20 50 80 110 140 TEMPERATURE [°C] DROPOUT VOLTAGE [mV] Dropout vs. Load Current 100 150 200 250 300 0 50 100 150 200 250 300 OUTPUT LOAD CURRENT [mA] DROPOUT VOLTAGE [mV] Enable Threshold vs. Input Voltage 0.0 0.4 0.8 1.2 1.6 INPUT VOLTAGE [V] ENABLE THRESHOLD [V] PSRR vs. Frequency (10mA Load) 0.01 0.1 1 10 100 FREQUENCY [kHz] PSRR [dB] CBYP = 0 CBYP = 10nF
Doc. No. MD-10010 Rev. C 6 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. PSRR (30mA Load) 0 100 200 300 400 500 VIN - VOUT [mV] PSRR [dB] 100kHz 10kHz 1kHz PSRR (200mA Load) 0 100 200 300 400 500 VIN - VOUT [mV] PSRR [dB] 100kHz 10kHz 1kHz
© Catalyst Semiconductor, Inc. 7 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice TRANSIENT CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Note: All transient characteristics are generated using the evaluation board CAT621XEVAL1. Enable Turn-On (100μA Load) Enable Turn-Off (100μA Load) Enable Turn-On (300mA Load) Enable Turn-Off (300mA Load) Line Transient Response (3.85V to 4.85V) Load Transient Response (0.1mA to 300mA)
Doc. No. MD-10010 Rev. C 8 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice PACKAGE OUTLINE DRAWING 5-LEAD TSOT-23 (1)(2) Notes: (1) All dimensions are in millimeters, angles in degrees. (2) Refer JEDEC MO-193. For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. θ E1 E e b D c A TOP VIEW SIDE VIEW END VIEW L SYMBOL MIN NOM MAX A1 . 0 0 A1 0.01 0.05 0.10 A2 0.80 0.87 0.90 b 0.30 0.45 c 0.12 0.15 0.20 D 2.90 BSC E 2.80 BSC E1 1.60 BSC e0 . 9 5 T Y P L 0.30 0.40 0.50 L1 0.60 REF L2 0.25 BSC θ 0º 8º
© Catalyst Semiconductor, Inc. 9 Doc. No. MD-10010 Rev. C Characteristics subject to change without notice EXAMPLE OF ORDERING INFORMATION (1)(2)(3)(5) Notes: (1) All packages are RoHS-comp liant (Lead-free, Halogen-free). (2) The standard finish is NiPdAu. (3) The device used in the above example is a CAT6218-180 TD-GT3 (VOUT = 1.8V, in an TSOT-23 package, NiPdAu, Tape and Reel, 3,000/Reel). Sales office. (5) Top marking for CAT6218 is RU.
ORDERING INFORMATION
Part Number V OUT Voltage Package Quantity per Reel CAT6218-150TD-GT3(4) 1.50V TSOT-23 3,000 CAT6218-180TD-GT3 1.80V TSOT-23 3,000 CAT6218-240TD-GT3 2.40V TSOT-23 3,000 CAT6218-250TD-GT3(4) 2.50V TSOT-23 3,000 CAT6218-270TD-GT3 2.70V TSOT-23 3,000 CAT6218-280TD-GT3(4) 2.80V TSOT-23 3,000 CAT6218-285TD-GT3(4) 2.85V TSOT-23 3,000 CAT6218-300TD-GT3 3.00V TSOT-23 3,000 CAT6218-320TD-GT3(4) 3.20V TSOT-23 3,000 CAT6218-330TD-GT3 3.30V TSOT-23 3,000 Prefix Device # Suffix CAT 6218 -180 TD -G T3 Product Number 6218 VOUT Voltage (4) 150: 1.50V 180: 1.80V 240: 2.40V 250: 2.50V 270: 2.70V 280: 2.80V 285: 2.85V 300: 3.00V 320: 3.20V 330: 3.30V Company ID Package TD: TSOT-23 Lead Finish G: NiPdAu Tape & Reel T: Tape & Reel 3: 3,000/Reel For Product Top Mark Codes, click here: http://www.catsemi.com/techsupport/producttopmark.asp
REVISION HISTORY
Date Rev. Reason 06/19/2007 A Preliminary Revision 02/11/2008 B Update Electrical Operating Characteristics Update Package Outline Drawing Change Document Number from MD-4010 to MD-10010 21-May-08 C Add other voltage options Add link to Top Mark Codes Copyrights, Trademarks and Patents © Catalyst Semiconductor, Inc. Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Adaptive Analog™, Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™, Quad-Mode™ and Quant um Charge Programmable™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUAR ANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRO DUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARIS ING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgica l implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconduct or product could creat e a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without not ice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the rele vant product informati on before placing order s. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054 Phone: 408.542.1000 Document No: MD-10010 Fax: 408.542.1200 Revision: C www.catsemi.com Issue date: 05 /21/08