CAT6217 CATALYST | Alldatasheet
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Technical content
© 2007 Catalyst Semiconductor, Inc. 1 Doc. No. MD-4011 Rev. A Characteristics subject to change without notice 150mA CMOS LDO Regulator
FEATURES
Guaranteed 150mA output current Low dropout voltage of 90mV typical at 150mA Stable with 1μF ceramic output capacitor External 10nF bypass capacitor for low noise Quick-start feature No-load ground current of 55μA typical Full-load ground current of 80μA typical ±1.0% output voltage initial accuracy ±2.0% accuracy over temperature “Zero” current shutdown mode Current limit and Under voltage lockout Thermal protection Thin SOT23-5 package
APPLICATIONS
Cellular phones Battery-powered devices Consumer Electronics
DESCRIPTION
The CAT6217 is a 150mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. The quick-start feature allows the use of an external bypass capacitor to reduce the overall output noise without affecting the turn-on time of just 150μs. With zero shutdown current and low ground current of 55μA typical, the CAT6217 is ideal for battery- operated devices with supply voltages from 2.3V to 5.5V. An internal under voltage lockout circuit disables the output at supply voltages under 2.1V typical. The CAT6217 offers 1% in itial accuracy and low dropout voltage, 90mV typical at 150mA. Stable operation is provided with a 1 μF ceramic capacitor, reducing required board space and component cost. Other features include output short-circuit current limit and thermal protection. The device is available in the low profile (1mm max height) 5-lead thin SOT23 package. PIN CONFIGURATION TSOT-23 5-Lead (1mm height) VOUT EN BYP VIN GND Top View TYPICAL APPLICATION CIRCUIT For Ordering Information details, see page 9. VIN BYPEN VOUT GND OFF ON VIN 1µF 2.3V to 5.5V CIN VOUT 1µF COUT 10nF CBYP (Optional) CAT6217
Doc. No. MD-4011 Rev. A 2 © 2007 Catalyst Semiconductor, Inc. pull-down resistor is provided.
4 BYP
Figure 2. CAT6217 Functional Block Diagram assures that if EN pin is left open, the circuit is disabled. response, its value can be increased to 4.7μF. capacitor in the no-load condition. must be connected to the ground plane on the PCB. Typical application circuit with external components is shown on page 1. power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. (3) The device is not guaranteed to work outside its operating rating.
© 2007 Catalyst Semiconductor, Inc. 3 Doc. No. MD-4011 Rev. A Characteristics subject to change without notice ELECTRICAL OPERATING CHARACTERISTICS (1) VIN = VOUT + 1.0V, VEN = High, IOUT = 100μA, CIN = COUT = 1µF, ambient temperature of 25ºC (over recommended operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range. Symbol Parameter Conditions Min Typ Max Unit -1.0 +1.0 VOUT-ACC Output Voltage Accuracy Initial accuracy -2.0 +2.0 TCOUT Output Voltage Temp. Coefficient 40 ppm/ºC -0.4 +0.4 %/V 0.6 1.0 VR-LOAD Load Regulation I OUT = 100μA to 150 mA 1.3 90 125 VDROP Dropout Voltage (2) I OUT = 150mA 150 mV 55 75 IOUT = 0μA
90 IGND Ground Current
IOUT = 150mA 80 μA 1 IGND-SD Shutdown Ground Current V EN < 0.4V μA f = 1kHz, CBYP = 10nF 64 PSRR Power Supply Rejection Ratio f = 20kHz, CBYP = 10nF 54 dB ISC Output short circuit current limit V OUT = 0V 350 mA TON Turn-On Time C BYP = 10nF 150 μs eN Output Noise Voltage (3) BW = 10Hz to 100kHz 45 μVrms ROUT-SH Shutdown Switch Resistance 250 Ω REN Enable pull-down resistor 2.5 M Ω VUVLO Under-voltage lock out (UVLO) threshold 2.1 V ESR C OUT equivalent series resistance 5 500 m Ω Enable Input VHI Logic High Level V IN = 2.3 to 5.5V 1.8 V VLO Logic Low Level V IN = 2.3 to 5.5V 0.4 V VEN = 0.4V 0.15 1 IEN Enable Input Current VEN = VIN 1.5 4 μA Thermal Protection TSD Thermal Shutdown 160 ºC THYS Thermal Hysteresis 10 ºC Notes: (1 Specification for 2.85V output version unless specified otherwise. (2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. During test, the input voltage stays always above the minimum 2.3V. (3) Specification for 1.8V output version.
Doc. No. MD-4011 Rev. A 4 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice TYPICAL CHARACTERISTICS (shown for 2.85V output version) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Dropout Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE [V] OUTPUT VOLTAGE [V] 100μA 150mA Line Regulation 2.82 2.83 2.84 2.85 2.86 2.87 INPUT VOLTAGE [V] OUTPUT VOLTAGE [V] Load Regulation 2.75 2.80 2.85 2.90 2.95 0 25 50 75 100 125 150 OUTPUT LOAD CURRENT [mA] OUTPUT VOLTAGE [V] Output Voltage vs. Temperature 2.82 2.83 2.84 2.85 2.86 2.87 -40 -10 20 50 80 110 140 TEMPERATURE [°C] OUTPUT VOLTAGE [V] Ground Current vs. Load Current 100 0 25 50 75 100 125 150 OUTPUT LOAD CURRENT [mA] GROUND CURRENT [μA] Ground Current vs. Temperature -40 -10 20 50 80 110 140 TEMPERATURE [°C] GROUND CURRENT [μA]
© 2007 Catalyst Semiconductor, Inc. 5 Doc. No. MD-4011 Rev. A Characteristics subject to change without notice TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Output Short-Circuit Current Limit 100 200 300 400 500 600 INPUT VOLTAGE [V] CURRENT LIMIT [mA] . VOUT = 0V Ground Current vs. Input Voltage INPUT VOLTAGE [V] GROUND CURRENT [μA] Dropout vs. Temperature (150mA Load) 100 150 200 -40 -10 20 50 80 110 140 TEMPERATURE [°C] DROPOUT VOLTAGE [mV] Dropout vs. Load Current 120 0 30 60 90 120 150 OUTPUT LOAD CURRENT [mA] DROPOUT VOLTAGE [mV] Enable Threshold vs. Input Voltage 0.0 0.4 0.8 1.2 1.6 INPUT VOLTAGE [V] ENABLE THRESHOLD [V] PSRR vs. Frequency (10mA Load) 0.01 0.1 1 10 100 FREQUENCY [kHz] PSRR [dB] CBYP = 0 CBYP = 10nF
Doc. No. MD-4011 Rev. A 6 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. PSRR (30mA Load) 0 100 200 300 400 500 VIN - VOUT [mV] PSRR [dB] 100kHz 10kHz 1kHz PSRR (150mA Load) 0 100 200 300 400 500 VIN - VOUT [mV] PSRR [dB] 100kHz 10kHz 1kHz
© 2007 Catalyst Semiconductor, Inc. 7 Doc. No. MD-4011 Rev. A Characteristics subject to change without notice TRANSIENT CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified. Note: All transient characteristics are generated using the evaluation board CAT621XEVAL1. Enable Turn-On (100μA Load) Enable Turn-Off (100μA Load) Enable Turn-On (150mA Load) Enable Turn-Off (150mA Load) Line Transient Response (3.85V to 4.85V) Load Transient Response (0.1mA to 150mA)
Doc. No. MD-4011 Rev. A 8 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice PACKAGE OUTLINES 5-LEAD TSOT-23 (1)(2) Notes: (1) All dimensions are in millimeters, angles in degrees. (2) Refer JEDEC MO-193. SYMBOL MIN NOM MAX A — — 1.00 A1 0.01 0.05 0.10 A2 0.80 0.87 0.90 b 0.30 — 0.45 c 0.12 0.15 0.20 D 2.90 BSC E 2.80 BSC E1 1.60 BSC e 0.95 BSC e1 1.90 BSC L 0.30 0.40 0.50 L1 0.60 REF L2 0.25 BSC θ 0º 8º A2 A D e b E e GAUGE PLANE L c θ 2HFor current Tape and Reel information, download the PDF file from:
© 2007 Catalyst Semiconductor, Inc. 9 Doc. No. MD-4011 Rev. A Characteristics subject to change without notice EXAMPLE OF ORDERING INFORMATION (1)(2)(3)(5) Notes: (1) All packages are RoHS-comp liant (Lead-free, Halogen-free). (2) The standard finish is NiPdAu. (3) The device used in the above example is a CAT6217-285TD-GT3 (V OUT = 2.85V, in an TSOT-23 package, NiPdAu, Tape and Reel, 3000 units). Semiconductor Sales office. (5) Top marking for CAT6217 is RT. Ordering Number V OUT Voltage Package Quantity per Reel CAT6217-150TD-GT3 1.50V TSOT-23 3000 CAT6217-180TD-GT3 1.80V TSOT-23 3000 CAT6217-250TD-GT3 2.50V TSOT-23 3000 CAT6217-280TD-GT3 2.80V TSOT-23 3000 CAT6217-285TD-GT3 2.85V TSOT-23 3000 CAT6217-330TD-GT3 (4) 3.30V TSOT-23 3000 Prefix Device # Suffix CAT 6217 -285 TD -G T3 Product Number 6217 VOUT Voltage (4) 150: 1.50V 180: 1.80V 250: 2.50V 280: 2.80V 285: 2.85V 330: 3.30V Company ID Package TD: TSOT-23 Lead Finish G: NiPdAu Tape & Reel T: Tape & Reel 3: 3000 Units/Reel
REVISION HISTORY
Date Rev. Reason 06/21/2007 A Preliminary Revision Copyrights, Trademarks and Patents Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™ and Quad-Mode™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GU ARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRO DUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARIS ING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgica l implant into the body, or other applications intended to support or sustain life, or for any ot her application in which the failure of the Catalyst Semiconduct or product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or se rvice described herein without not ice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the rele vant product informati on before placing order s. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054 Phone: 408.542.1000 Document No: MD-4011 Fax: 408.542.1200 Revision: A 1Hwww.catsemi.com Issue date: 06 /21/07