CAT4004_08 CATALYST | Alldatasheet
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Technical content
© Catalyst Semiconductor, Inc. 1 Doc. No. MD-5024 Rev. B Characteristics subject to change without notice
FEATURES
Four LED current sinks with tight matching Low Dropout Driver 130mV at 30mA No switching noise Shutdown current < 1μA LED current set by external resistor Dimming via 1-wire EZDimTM interface Thermal shutdown protection RoHS Compliant 8-lead 2mm x 3mm TDFN package
APPLICATIONS
LCD Display Backlight Cellular Phones Digital Still Cameras Handheld Devices
ORDERING INFORMATION
CAT4004VP2-T3 TDFN-8 (1) 3000 FT CAT4004VP2-GT3 TDFN-8 (2) 3000 HA Notes: (1) Matte-Tin Plated Finish (RoHS-compliant). (2) NiPdAu Plated Finish (RoHS-compliant).
DESCRIPTION
The CAT4004 provides four matched low dropout curren t sources to drive LEDs. An external resistor on RSET sets the current in the LED channels. Each LED channel includes an individual control loop allowing the device to handle a wide range of LED forward voltages while still maintaining tight current matching. The EN/DIM logic inputs supports device enable and a digital dimming interface for current setting of all LEDs. Six different current dimming ratios are available. The device is aimed at “direct drive” battery applications. It is required that the battery or voltage source have enough headroom to drive the LED forward voltage and current sink (>150mV). The device is available in a tiny 8-lead TDFN 2mm x 3mm package with a max height of 0.8mm. For Ordering Information details, see page 10. PIN CONFIGURATION TYPICAL APPLICATION CIRCUIT 8-lead TDFN Package (Top View) EN/DIM 1 8 VIN GND 2 7 RSET LED1 3 CAT4004
6 LED4
4-Channel Constant Current LED Driver with EZDim™ CAT4004 VIN EN/DIM RSET GND LED1 LED2 LED3 LED4 RSET 3.8kΩ One wire programming 20mA VIN 1µF 2.4V to 5.5V CIN
Doc. No. MD-5024 Rev. B 2 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS Parameter Rating Unit VIN 2.4 to 5.5 (1) V Ambient Temperature Range -40 to +85 °C ILED per LED pin 0 to 40 mA Typical application circuit with external components is shown on page 1. ELECTRICAL OPERATING CHARACTERISTICS (over recommended operating conditions unless specified otherwise) VIN = 4.0V, EN = High, TAMB = 25°C Symbol Name Conditions Min Typ Max Units IQ Quiescent Current No load, RSET = Float No load, RSET = 4.8kΩ 0.6 1.0 mA mA IQSHDN Shutdown Current V EN = 0V 1 µA ILED-ACC LED Current Accuracy 1mA ≤ ILED ≤ 40mA ±1 % ILED-DEV LED Channel Matching LED LEDAVGLED I II − -5 ±1 +5 % VDOUT Dropout Voltage I LED = 30mA 130 mV REN/DIM VHI VLO EN/DIM Pin
- Internal pull-down resistor
- Logic High Level
- Logic Low Level 1.3 100 0.4 kΩ V V TSD Thermal Shutdown 150 °C THYS Thermal Hysteresis 20 °C VUVLO Undervoltage lockout (UVLO) threshold 1.8 V Parameter Rating Unit VIN, LEDx, RSET 6 V EN/DIM Voltage V IN + 0.7 V Storage Temperature Range -65 to +160 °C Junction Temperature Range -40 to +150 °C Lead Temperature 300 °C
For 2.4 ≤ VIN ≤ 5.5V, over full ambient temperature range -40ºC to +85ºC. Figure 1. EN/DIM Dimming Timing Diagram
- The gain is changed on the rising edges of the EN/DIM input.
levels by pulsing the input signal, as shown on Figure 3. LO may be ignored and filtered by the device. if EN/DIM is held low for 1.5ms or more.
© Catalyst Semiconductor, Inc. 4 Doc. No. MD-5024 Rev. B Characteristics subject to change without notice TYPICAL PERFORMANCE CHARACTERISTICS VIN = 4V, VF = 3.3V, IOUT = 80mA (4 LEDs at 20mA), CIN = 1μF, TAMB = 25°C unless otherwise specified. Quiescent Current vs. Input Voltage 0.6 0.8 1.0 1.2 1.4 INPUT VOLTAGE [V] QUIESCENT CURRENT [mA] Quiescent Current vs. Temperature 0.6 0.8 1.0 1.2 1.4 -40 0 40 80 120 TEMPERATURE [°C] QUIESCENT CURRENT [mA] LED Current Change vs. Input Voltage -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 INPUT VOLTAGE [V] LED CURRENT CHANGE [%] LED Current Change vs. Temperature -10 -40 0 40 80 120 TEMPERATURE [°C] LED CURRENT CHANGE [%] LED Current vs. RSET Resistor 0 5 10 15 20 RSET [kΩ] LED CURRENT [mA]
© Catalyst Semiconductor, Inc. 5 Doc. No. MD-5024 Rev. B Characteristics subject to change without notice TYPICAL PERFORMANCE CHARACTERISTICS VIN = 4V, VF = 3.3V, IOUT = 80mA (4 LEDs at 20mA), CIN = 1μF, TAMB = 25°C unless otherwise specified. RSET Pin Voltage vs. Input Voltage 0.2 0.3 0.4 0.5 0.6 0.7 INPUT VOLTAGE [V] RSET VOLTAGE [V] RSET Pin Voltage vs. Temperature 0.2 0.3 0.4 0.5 0.6 0.7 - 4 004 0 8 0 1 2 0 TEMPERATURE [°C] RSET VOLTAGE [V] LED Current vs. LED Pin Voltage LED PIN VOLTAGE [V] LED CURRENT [mA] Dropout Characteristics 0 50 100 150 200 250 300 LED PIN VOLTAGE [mV] LED CURRENT [mA] Efficiency vs. Input Voltage 100 INPUT VOLTAGE [V] EFFICIENCY [%]
Doc. No. MD-5024 Rev. B 6 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice TYPICAL PERFORMANCE CHARACTERISTICS VIN = 4V, VF = 3.3V, IOUT = 80mA (4 LEDs at 20mA), CIN = 1μF, TAMB = 25°C unless otherwise specified. Power Up Waveform Power Down Waveform Line Transient Waveform 4V to 5.5V Dimming Waveform 80mA to 40mA
© Catalyst Semiconductor, Inc. 7 Doc. No. MD-5024 Rev. B Characteristics subject to change without notice PIN DESCRIPTIONS Pin # Name Function
1 EN/DIM Device enable (active high) and dimming control
2 GND Ground reference
3 LED1 LED1 cathode terminal
4 LED2 LED2 cathode terminal
5 LED3 LED3 cathode terminal
6 LED4 LED4 cathode terminal
7 RSET RSET external LED mirror gain 128
8 VIN Device supply input, connect to battery or supply
TAB TAB Connect to GND on the PCB PIN FUNCTION VIN is the supply pin for the device logic. A small 1 μF ceramic bypass capacitor is required between the VIN pin and ground near the device. The operating input voltage range is from 2.5V to 5.5V. Whenever the input supply falls below the under-voltage threshold (1.8V), all the LED channels are disabled and the device enters shutdown mode. EN/DIM is the enable and one wire dimming input for all LED channels. Levels of logic high and logic low are set at 1.3V and 0.4V respectively. When EN/DIM is initially taken high, the device becomes enabled and all LED currents are set to the full scale according to the resistor R SET. To place the device into “zero current” shutdown mode, the EN/DIM pin must be held low for at least 1.5ms. LED1 to LED4 provide the internal regulated current for each of the LED cathodes. There pins enter a high impedance zero current stat e whenver the device is placed in shutdown mode. RSET is connected to the resistor (R SET) to set the full scale current for the LEDs. The voltage at this pin is regulated to 0.6V. The ground side of the external resistor should be star connected back to the GND of the PCB. In shutdown mode, RSET beomes high impedance. GND is the ground reference for the device. The pin must be connected to the ground plane on the PCB. TAB is the exposed pad underneath the package. For best thermal performance, the tab should be soldered to the PCB and connected to the ground plane.
Doc. No. MD-5024 Rev. B 8 © Catalyst Semiconductor, Inc.
4 Current Sink
Figure 2. CAT4004 Functional Block Diagram brightness that can be set through the EN/DIM pin. current sensing circuitry on each channel. channels should be left open.
© Catalyst Semiconductor, Inc. 9 Doc. No. MD-5024 Rev. B Characteristics subject to change without notice PACKAGE OUTLINE DRAWING TDFN 8-Pad 2 x 3mm (VP2) (1)(2) For current Tape & Reel information, download the pdf file from: http://www.catsemi.com/documents/tapeandreel.pdf Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC standard MO-229. PIN#1 IDENTIFICATION E2E ebD TOP VIEW SIDE VIEW BOTTOM VIEW PIN#1 INDEX AREA FRONT VIEW A LD2 SYMBO L MIN NOM MAX A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A2 0.45 0.55 0.65 A3 0.20 REF b 0.20 0.25 0.30 D 1.90 2.00 2.10 D2 1.30 1.40 1.50 E 2.90 3.00 3.10 E2 1.20 1.30 1.40 e0 5 0 T Y P L 0.20 0.30 0.40
Doc. No. MD-5024 Rev. B 10 © Catalyst Semiconductor, Inc. Characteristics subject to change without notice EXAMPLE OF ORDERING INFORMATION1 Notes: (1) All packages are RoHS-compliant (Lead-free, Halogen-free). (2) The standard lead finish is NiPdAu. (3) The device used in the above example is a CAT4004VP2 -GT3 (TDFN, NiPdAu Plated Finish, Tape & Reel 3000). (4) For Matte-Tin package option, please contact y our nearest Catalyst Semiconductor Sales office. Prefix Device # Suffix CAT 4004 VP2 – G T2 Product Number 4004 Tape & Reel T: Tape & Reel 3: 3000/Reel Lead Finish G: NiPdAu Blank: Matte-Tin (4) Package VP2: TDFN 2 x 3mm Optional Company ID
REVISION HISTORY
Date Rev. Reason 03/15/2007 A Initial Issue 01/07/2008 B Add NiPdAu lead finish Add Extended Temperature range Update Package Outline Drawing Update Example of Ordering Information Add “MD-” to Document Number Catalyst Semiconductor, Inc. Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054 Phone: 408.542.1000 Document No: MD-5024 Fax: 408.542.1200 Revision: B 2Hwww.catsemi.com Issue date: 01/07 /08 Copyrights, Trademarks and Patents © Catalyst Semiconductor, Inc. Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Adaptive Analog™, Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™, Quad-Mode™ and Quant um Charge Programmable™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUAR ANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRO DUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARIS ING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgica l implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconduct or product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any produ ct or service descr ibed herein without not ice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the rele vant product informati on before placing order s. Circuit diagrams illustrate typical semiconductor applications and may not be complete.