2SC2655 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR (NPN)

FEATURES

z Low Saturation Voltage: V CE(sat) =0.5V(Max)(I C =1A) z High Speed Switching Time: t stg =1μs(Typ.) z Complementary to 2SA1020 MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Para meter Symbol Unit V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current –Continuous 2 A P C Collector Power Dissipation 0.9 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ TO-92L 1.EMITTER 2.COLLECTOR 3.BASE JC(T www.cj-elec.com 1 /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit /g3 C2655/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 /g59/g59/g59/g32/g38/g82/g71/g72/g3

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity TO-92L Bulk TO-92L Tape 2SC2655 2SC2655-TA /g59/g59/g59 /g122 C2655 F,Aug,2017 500pcs/Bag 2000pcs/Box Solid dot = Green molding compound device, if none, the normal device

/g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified www.cj-elec.com 2 F,Aug,2017 P a r a m e t e r Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC= 100μA,IE= 0 50 V Co llector-emitter breakdown voltage V(B R)CEO IC= 10mA,IB= 0 50 V Emitter-b ase breakdown voltage V( BR)EBO IE= 100μA,IC=0 5 V Co llector cut-off current ICB O V CB= 50V,IE=0 1 μA Emitter cut-off current IEBO V EB=5 V,IC=0 1 μA hFE(1) V CE=2 V,IC= 500mA 70 240 DC cu rrent gain hFE(2) V CE=2 V,IC= 1.5A 40 Co llector-emitter saturation voltage VCE (sat) I C=1 A,IB= 0.05A 0.5 V Bas e-emitter saturation voltage VBE( sat) I C=1 A,IB= 0.05A 1.2 V T ransition frequency fT V CE=2 V,IC= 0.5A 100 MHz Co llector output capacitance Cob V CB= 10V,IE= 0,f=1MHz 30 pF T une on Time ton 0.1 S torage Time tstg 1 Sw itch time Fall Time tf VCC= 30V,Ic=1A, IB1=- IB2= 0.05A 0.1 μs CLASSIFICATION OF hFE(1) Rank O Y Ra nge 70-140 120-240

0.01 0.1 1 100 200 300 400 0.2 0.4 0.6 0 .8 1.0 1.2 0.01 0.1 0 25 50 75 100 125 150 200 400 600 800 1000 0.01 0.1 1 0.0 0.1 0.2 0.3 0.4 0.01 0.1 1 0.0 0.4 0.8 1.2 468 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 COM MON EMITTER VCE=2V IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) VBEIC —— COMMO N EMITTER VCE=2V Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (A) BASE-EMM ITER VOLTAGE VBE (V) Pc — — Ta COLLECTO R POWER DISSIPATION Pc (mW) AMBIENT T EMPERATURE Ta ( )℃ β=20 Ta=100℃ Ta=25℃ ICVC Esat —— COLLECTOR-EMITTER SATURATION VOLTAG E VCEsa t (V) COLLECTOR CURRENT IC (A) hFE — β=20 ICVB Esat —— Ta=100℃ Ta=25℃ BASE-EMITT ER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (A) S tatic Characteristic A 4.5m A A 3.5m A A 2.5m A A 1.5m A A IB=0.5m A COM MON EMITTER Ta=25℃ COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) f=1MHz IE=0/ IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— Cob Cib CAPACITANCE C (p REVERSE VOLTAG E V (V) T ypical Characteristics www.cj-elec.com 3 F,Aug,2017

bol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.750 4.050 0.148 0.159 A1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 D 4.750 5.050 0.187 0.199 D1 4.000 0.157 E 7.850 8.150 0.309 0.321 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 13.800 14.200 0.543 0.559 Φ 1.600 0.063 0.000 0.300 0.000 0.012h www.cj-elec.com 4 F,Aug,2017

www.cj-elec.com 5 F,Aug,2017