C2611-T0-92 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C2611 TRANSISTOR（ NPN ）
FEATURES
PCM : 0.75 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μ A ，IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μ A，IC=0 V Collector cut-off current ICBO VCB= 600 V , IE=0 100 μ A Collector cut-off current ICEO VCE= 400 V , IB=0 200 μ A Emitter cut-off current IEBO VEB= 7 V , IC=0 100 μ A hFE（1） VCE= 20 V, IC= 20mA DC current gain hFE（2） VCE= 10V, IC= 0.25 mA Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Transition frequency f T VCE= 20 V, IC=20mA f = 1MHz MHz Fall time t f 0.3 μ s Storage time t S IC=50mA, IB1=-IB2=5mA, VCC=45V 1.5 μ s CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 1 2 3 TO—92 1. BASE 2.COLLECTOR 3. EMITTER
D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP 1.270TYP φ