BTN2-0018 MARKIMICROWAVE | Alldatasheet
Document overview
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Technical content
Features
Broadband: 3 MHz to 18 GHz Low Insertion Loss High Power Non-Resonant Compact Size Electrical Specifications - Specifications guaranteed from -55 to +100°C, measured in a 50Ω system. Parameter Frequency Range Min Typ Max Insertion Loss (dB) 10 MHz-18 GHz 0.7 1.5 3-10 MHz 2 DC Port Isolation (dB)
3 MHz -1 GHz 50
Return Loss (dB)
3 MHz-18 GHz
RF Power (W) 10 DC Current (A) DC Voltage (V) 50 DC Resistance (Ω) 0.3 Inductance (uH) 4.7 Capacitance (nF) 100 Weight (g) 10 Risetime /Falltime (ps)1 10 1Specified as 90%/10%. Calculated from bt2 = (out2 – in2) BTN20018 [5.0] .20 [1.70] [5.97] Ø.067 Thru .235 [11.94] .470 4 PL [1.27] .050 .370 [9.40] [11.94] .470 [9.9] .39 [5.08] .200 [3.43] .135 D/C [MM] INCH PROJECTION XXX=±.005 XX=±.02 The BTN2-0018 is constructed using a custom-made, resonance-free conical inductor to achieve extremely broadband performance. By minimizing the overall inductor size and using proprietary packaging techniques, the BT N2-0018 is a superior option in terms of performance, reliability and ease -of-use when compared to cumbersome user-designed bias tees employing off-the-shelf conical inductors. The extremely low cutoff and resonance free operation makes t he BTN2 -0018 suitable for biasing amplifiers, lasers, and modulators driven with high frequency data patterns.
Copyright © 2020 Marki Microwave, Inc. | Rev. B HIGH POWER BIAS TEE BTN2-0018 Page 2 Schematic Application Examples Fig. 1. Example Schematics of a) Broadband Microwave Amplifier Biasing, b) Laser/LED Biasing for Data Communication and c) Mach-Zender Modulator Biasing for Data Communication Typical Performance Fig. 2. RF insertion loss. Fig. 3. Return loss. 0 2 4 6 8 10 12 14 16 18 Insertion Loss (dB) Frequency (GHz) -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 Return Loss (dB) Frequency (GHz) RF Port Common Port RF DC Common (RF+DC)
Copyright © 2020 Marki Microwave, Inc. | Rev. B HIGH POWER BIAS TEE BTN2-0018 Page 3 Fig. 4. Low frequency RF response. Fig. 6. DC-RF isolation. Fig. 8. Group delay. Fig. 5. Low frequency isolation. Fig. 7. Near DC isolation Fig. 9. Performance over temperature -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 Insertion Loss (dB) Frequency (MHz) -50 -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 Isolation (dB) Frequency (GHz) 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 Group Delay (ps) Frequency (GHz) -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 Insertion Loss (dB) Common Port Return Loss (dB) Frequency (GHz) 5C 85C
Copyright © 2020 Marki Microwave, Inc. | Rev. B HIGH POWER BIAS TEE BTN2-0018 Page 4 Fig. 10. Oscilloscope measurements of the BTN2 -0018 with a 10Gb/s PRBS pattern. Eye diagrams are taken with a 231-1 PRBS input demonstrating minimal eye distortion/closure afforded by the extremely low frequency operation of the bias tee. Model Number Description BTN2-0018 3 MHz to 18 GHz High Power Bias Tee with SMA connectors1, LEAD-FREE/RoHS COMPLIANT 1Consult factory for other connector options.
Revision History
Revision code Revision Date Comment B May 2020 RoHS Compliant Assembly Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Mi crowave makes no warranty, representation or guarantee regarding the suitability of its product s for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use of or application of any product. OUTPUT INPUT