BFS20 JIANGSU | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BFS20 TRANSISTOR (NPN)
FEATURES
Very Low Feedback Capacitance Low Current Low Voltage
APPLICATIONS
IF and VHF Applications in Thick and Thin-Film Circuits MARKING:G11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 25 mA PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=15V, IB=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC=7mA 40 120 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V Base-emitter voltage VBE VCE=10V, IC=7mA 0.9 V Transition frequency fT VCE=10V,IC=5mA, f=100MHz 275 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 1 pF 1. BASE 2. EMITTER 3. COLLECTOR SOT–23 www.cj-elec.com 1 A,Jun,2014www.cj-elec.com B,Oct,2014 JC(T
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 2 A,Jun,2014www.cj-elec.com B,Oct,2014
www.cj-elec.com 3 A,Jun,2014www.cj-elec.com B,Oct,2014