BFR391A SS | Alldatasheet

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16.5 GHz fT Wideband NPN Chip - BFR391A

Silicon NPN Planar RF Transistor in bare die form  High Power Gain  Low Noise  Wide Transition Frequency Rev 1.0 01/08/22 Features: NPN transistor in unencapsulated chip form. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.

Description

Die Size (Unsawn) 350 x 350 13.78 x 13.78 µm mils Base Pad Size 65 x 65 2.65 x 2.65 µm mils Emitter Pad Size 210 x 65 8.27 x 65 µm mils Die Thickness 150 (±20) 5.90 (±0.78) µm mils Top Metal Composition Al 0.6µm Back Metal Composition Au 0.6µm The following part suffixes apply:  No suffix - MIL-STD-750 /2072 Visual Inspection  “ H” - MIL-STD-750 /2072 Visual Inspection + MIL-PRF-38534 Class H LAT  “ K” - MIL-STD-750 /2072 Visual Inspection + MIL-PRF-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification Supply Formats: Mechanical Specification  Default – Die in Waffle Pack (400 per tray capacity)  Sawn Wafer on Tape – By specific request  Unsawn Wafer – By specific request  With additional electrical selection – Specific request  Sawn as pairs – Specific request  Adjacent pair pick – Specific request Die Dimensions in µm (mils)

Ordering Information

CHIP BACKSIDE IS COLLECTOR BASE 210(8.27) 350(13.78) 350(13.78) (2.56) (2.56) (2.56) EMITTER

FIGURE 9. Power Dissipation versus Ambient Temperature FIGURE 1. Transition Frequency versus Collector Current FIGURE 2. Noise Figure versus Collector Current

FIGURE 3. Insertion Power Gain versus Collector Current FIGURE 4. hFE versus Collector Current FIGURE 5. Collector Current versus Collector-to-Emitter FIGURE 6. Collector Current versus Base-to-Emitter

FIGURE 7. Reverse Transfer Capacitance FIGURE 8. Output Capacitance FIGURE 9. Power Dissipation versus Ambient Temperature may reduce device reliability. Ltd hereby disclaims any and all warranties and liabilities of any kind.