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TRONICS TECHNOLOGY CO., LTD TO -92 Plastic-Encapsulate Transistors B F 4 2 0 TRANSISTOR ( NPN) BF422 FEA T URES z Low feedback cap acitance. z NPN transistors in a TO -92 plastic package. PNP complements: BF421 and BF423 z Class-B video output stag es in colour television and professional monitor equipment. MAXIMUM RATINGS (Ta=25℃ unless otherw ise noted) Symbo l Parameter BF420 BF422 Unit V CBO Collector-Bas e Voltage 300 250 V V CEO Collector-Emitter V oltage 300 250 V V EBO Emitter-Base Vo ltage 5 V IC Collector Curr ent -Continuous 100 mA P C Collector Po wer Dissipation 0. 830 W Rthja Thermal resi stance from junction to ambient 151 ℃/W T j Junction temp erature 150 ℃ T stg St orage Temperature Range -55~150 ℃ TO- EMITTER 2.COLLECTOR 3. BASE www.cj-elec.com 1 E,Aug,2017
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity TO-92 Bulk 1000pcs/Bag TO-92 Tape 2000pcs/Box BF420 BF420-TA TO-92 Bulk 1000pcs/Bag TO-92 Tape 2000pcs/Box BF422 BF422-TA /g48/g36/g53/g46/g44/g49/g42 /g3Solid dot=Green molding compound device, /g59/g59/g59/g32/g38/g82/g71/g72 /g3 BF420,BF422/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 if none,the normal device BF420 XXX/g122 BF422 XXX/g122 Equivalent Circuit
www.cj-elec.com/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g21 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 E,Aug,2017 /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage BF420 B F 4 2 2 V(BR)CBO IC=100μA, IE=0 300 250 V Collector-emitter b reakdown voltage BF420 B F 4 2 2 V(BR)CEO IC= 1mA , IB=0 300 250 V Emitter-base b reakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-o ff current ICBO V CB=200V, IE=0 0.01 μA Emitter cut-off current IEBO V EB=5V, IC=0 0.05 μA D C c u r r e n t g a i n hFE VCE=20V, IC=25mA 50 Collector-emitter satur ation voltage VCE(sat) I C=30mA, IB= 5mA 0.6 V Trans ition frequency f T VCE=10V, IC= 10mA f=100MHz
60 MHz
ance Cre V CE=30V,IC=0,f=1MHz 1.6 pF
A 3.300 3 .700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Layout www.cj-elec.com 3 E,Aug,2017
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