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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B F 4 2 1 TRANSISTOR (PNP) BF423
FEATURES
z Low Feedback Capacitance. z PNP Transistors in a TO-92 Plastic Package. NPN C omplements: BF420 and BF422 z Class-B Video Output Stages in Colour Television and Professional M onitor Equipment. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbo l Parameter BF421 BF
423 Unit
VCBO Collector-Base Voltage -300 -250 V VCEO Collector-Emitter Voltage -300 -250 V VEBO Emitter-Base Vo ltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 0.83 W Rthja Thermal resistance from junction to ambient 151 ℃/W T j Junction temperature 150 ℃ T stg Storage Temperature Range - 55~ +150 ℃ TO-92 1. EMITTER 2.COLLECT OR 3. BASE www.cj-elec.com 1 E,Aug,2017
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity TO-92 Bulk 1000pcs/Bag TO-92 Tape 2000pcs/Box BF421 BF421-TA TO-92 Bulk 1000pcs/Bag TO-92 Tape 2000pcs/Box BF423 BF423-TA /g48/g36/g53/g46/g44/g49/g42 /g3Solid dot=Green molding compound device, /g59/g59/g59/g32/g38/g82/g71/g72 BF421,BF423/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 if none,the normal device BF421 XXX/g122 BF423 XXX/g122 Equivalent Circuit
www.cj-elec.com/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g21 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 E,Aug,2017 /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified Parameter Symbol T est conditions Min Max Unit Collector-base breakdown voltage BF421 B F 4 2 3 V(BR)CBO IC=--100μA, IE=0 -300 -250 V Collector-emitter b reakdown voltage BF421 B F 4 2 3 V(BR)CEO IC= -1mA , IB=0 -300 -250 V Emitter-base b reakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-o ff current ICBO V CB=-200 V , IE=0 -0.0 1 μA E m i tt e r c u t - o f f c u r r e n t B F 4 2 1 BF423 IEBO V EB=-5V , I C=0 -0.1 -0.05 μA D C cu r r e n t g a i n hFE VCE=-20V, IC=-25mA 50 Collector-emitter satu ration voltage BF421 BF423 VCE(sat) IC=-20mA, IB=-2mA IC=-30mA, IB=-5mA -0.6 V Trans ition frequency fT VCE=-10V, IC=-10mA f = 100MHz
60 MHz
ance Cre V CE=-30V,IC=0,f=1MHz 1.6 pF
A 3.300 3 .700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Layout www.cj-elec.com 3 E,Aug,2017
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