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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BA T60B SCHOTTKY BARRIER DIODE
FEATURES
High Current Rectifier Schottky Diode with Low VF Drop Low Voltage, Low Inductance For Power Supply For Detection and Step-up-Conversion MARKING: W5 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 10 V IF Fo rward Current 3 IFSM Non-repetitive Peak Forward Surge Current@t=8.3ms 5 A PD Pow er Dissipation 350 mW RθJA T hermal Resistance from Junction to Ambient 286 ℃/W Tj Junct ion Temperature 125 ℃ Tstg S torage Temperature -55~+150 ℃ ELE CTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Rev erse voltage V(BR) I R=1mA 10 V VR=5V 15 μA Rev erse current IR VR=8V 25 μA IF=10 0mA 0.38 IF=50 0mA 0.5 For ward voltage VF IF=1000mA 0.6 V Tot al capacitance Ctot V R=5V,f=1MHz 30 pF SOD -323 1 D,Mar,2015www.cj-elec.com The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
0.0 0 1E-3 0.01 0.1 0246 8 1 0 0.1 100 1000 0 5 10 15 20 100 1000 Fo rward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPAT ION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ 3E-3 Ta=25℃ 300 0.03 0.3 Ta =100℃ FORWARD CURRENT IF (A) FO RWARD VOLTAGE VF (V) 300 0.3 Ta=100℃ Ta=25℃ REVERSE CURRENT IR (uA) REVERSE VOLT AGE VR (V) Ta=25℃ f=1MHz Ca pacitance Characteristics REVERSE VOLT AGE VR (V) CAPACITANCE BET WEEN TERMINALS CT (pF) Ty pical Characteristics www.cj-elec.com 2 D,Mar,2015
SOD-323 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2015
www.cj-elec.com 4 D,Mar,2015