BAP64-02 ETL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

S26–1/2 Silicon PIN diode SOD523 SC-79 BAP64 – 02 ANODE CATHODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 175 V II F continuous forward current – 100 mA P tot total power dissipation T s =90°C – 715 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V F forward voltage I F =50 mA 0.95 1.1 V I R reverse current V R =175V – 10 µA V R =20V – 1 µA C d diode capacitance V R = 0; f = 1 MHz 0.48 – pF V R = 1 V; f = 1 MHz 0.35 – pF V R = 20 V; f = 1 MHz 0.23 0.35 pF r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 20 40 Ω I F = 1 mA; f = 100 MHz; note 1 10 20 Ω I F = 10 mA; f = 100 MHz; note 1 2 3.8 Ω I F = 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω τ L charge carrier life time when switched from I F =10 mA to 1.55 – µ s I R = 6 mA; R L = 100 Ω; measured at I R =3 mA L S series inductance 0.6 – nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL P ARAMETER V ALUE UNIT R th j-s thermal resistance from junction to soldering-point 85 K/W

FEATURES

  • High voltage, current controlled
  • RF resistor for RF attenuators and switches
  • Low diode capacitance
  • Low diode forward resistance
  • Very low series inductance
  • For applications up to 3 GHz.

APPLICATIONS

  • RF attenuators and switches.

DESCRIPTION

Planar PIN diode in a SOD523 ultra small plastic SMD package.

S26–2/2 BAP64-02 10 2 10 -1 04 8 1 2 1 6 2 0I F (mA ) r D ( Ω ) 500 400 300 200 100 010 -1 1 10 10 2 V R ( V ) C d (pF) f = 100 MHz; T j =25°C f = 1 MHz; T j =25°C - 10 - 20 - 30 f (GHz ) 0.5 1 1.5 2 2.5 3 f (GHz ) |s 21| 2(dB) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. |s 21| 2(dB) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25°C. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25°C. (1) I F =100 mA. (2) I F =10 mA. (3) I F = 1 mA. (4) I F = 0.5 mA. 0.5 1 1.5 2 2.5 3