BAP63-03

BAP63-03 ETL | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

S25–1/2

FEATURES

• High speed switching for RF signals
• Low diode capacitance
• Low diode forward resistance
• Very low series inductance
• For applications up to 3 GHz.

APPLICATIONS

• RF attenuators and switches.

DESCRIPTION

Planar PIN diode in a SOD323 small SMD plastic package. Silicon PIN diode SOD523 SC-79 BAP63 – 03 ANODE CATHODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 50 V II F continuous forward current – 100 mA P tot total power dissipation T s < 90°C – 500 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V F forward voltage I F =50 mA 0.95 1.1 V I R reverse current V R =35 V – 10 nA C d diode capacitance V R = 0; f = 1 MHz 0.4 – pF V R = 1 V; f = 1 MHz 0.35 – pF V R = 20 V; f = 1 MHz 0.27 0.32 pF r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 Ω I F = 1 mA; f = 100 MHz; note 1 1.95 3 Ω I F = 10 mA; f = 100 MHz; note 1 1.17 1.8 Ω I F = 100 mA; f = 100 MHz; note 1 0.9 1.5 Ω |s 21| 2 isolation V R = 0; f = 900 MHz 15.4 – dB V R = 0; f = 1800 MHz 10.1 – dB V R = 0; f = 2450 MHz 7.8 – dB |s 21| 2 insertion loss I F = 0.5 mA; f = 900 MHz 0.21 – dB I F = 0.5 mA; f = 1800 MHz 0.28 – dB I F = 0.5 mA; f = 2450 MHz 0.38 – dB |s 21| 2 insertion loss I F = 1 mA; f = 900 MHz 0.18 – dB I F = 1 mA; f = 1800 MHz 0.26 – dB I F = 1 mA; f = 2450 MHz 0.35 – dB |s 21| 2 insertion loss I F = 10 mA; f = 900 MHz 0.13 – dB I F = 10 mA; f = 1800 MHz 0.20 – dB I F = 10 mA; f = 2450 MHz 0.30 – dB |s 21| 2 insertion loss I F = 100 mA; f = 900 MHz 0.10 – dB I F = 100mA; f = 1800 MHz 0.18 – dB I F = 100 mA; f = 2450 MHz 0.28 – dB

S25–2/2 BAP63-03 10 -1 04 8 1 2 1 6 2 0I F (mA ) r D ( Ω ) 500 400 300 200 100 010 -1 1 10 10 2 V R ( V ) C d (pF) f = 100 MHz; T j =25°C f = 1 MHz; T j =25°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue) SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT τ L charge carrier life time when switched from I F =10 mA to 310 – ns I R = 6 mA; R L = 100 Ω; measured at I R =3 mA L S series inductance 1.5 – nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL P ARAMETER V ALUE UNIT R th j-s thermal resistance from junction to soldering-point 120 K/W - 10 - 20 - 30 - 40 f (GHz ) -0.1 -0.2 -0.3 -0.4 -0.5 01 23 f (GHz ) |s 21| 2(dB) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. |s 21| 2(dB) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25°C. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25°C. (1) I F =100 mA. (2) I F =10 mA. (3) I F = 1 mA. (4) I F = 0.5 mA. 01 23