BAP51-02 ETL | Alldatasheet
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Technical content
S24–1/2 General purpose PIN diode SOD523 SC-79 BAP51 – 02 ANODE CATHODE
FEATURES
- Low diode capacitance
- Low diode forward resistance.
APPLICATIONS
- General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 60 V II F continuous forward current – 50 mA P tot total power dissipation T s =90°C – 715 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT V F forward voltage I F =50 mA – 0.95 1.1 V V R reverse voltage I R =10mA 50 – – V I R reverse current V R =50 V – – 100 nA C d diode capacitance V R = 0; f = 1 MHz – 0.4 – pF V R = 1 V; f = 1 MHz – 0.3 0.55 pF V R = 5 V; f = 1 MHz – 0.2 0.35 pF r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 – 5.5 9 Ω I F = 1 mA; f = 100 MHz; note 1 – 3.6 6.5 Ω I F = 10 mA; f = 100 MHz; note 1 – 1.5 2.5 Ω Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL P ARAMETER V ALUE UNIT R th j-s thermal resistance from junction to soldering-point 85 K/W
S24–2/2 BAP51-02 0 481 2 1 6 2 0 I F (mA ) r D ( Ω ) 500 400 300 200 100 010 -1 11 0 V R ( V ) C d (pF) f = 100 MHz; T j =25°C f = 1 MHz; T j =25°C -10 -15 -20 -25 f (GHz ) -0.5 -1.5 -2.5 0.5 1 1.5 2 2.5 3 f (GHz ) |s 21| 2(dB) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. |s 21| 2(dB) 0.5 1 1.5 2 2.5 3 (1) I F =10 mA. (2) I F = 1 mA. (3) I F = 0.5 mA. Fig.3 Insertion loss ( |s 21| 2 ) of the diode in on-state as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25°C. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25°C.