BAP50-02

BAP50-02 ETL | Alldatasheet

Document overview

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Technical content

S23–1/2 General purpose PIN diode SOD523 SC-79 BAP50 – 02 ANODE CATHODE

FEATURES

• Low diode capacitance
• Low diode forward resistance.

APPLICATIONS

• General RF applications.

DESCRIPTION

General purpose PIN diode in a SOD523 small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 50 V II F continuous forward current – 50 mA P tot total power dissipation T s =90°C – 715 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT V F forward voltage I F =50 mA – 0.95 1.1 V V R reverse voltage I R =10µA5 0 – – V I R reverse current V R =50 V – – 100 nA C d diode capacitance V R = 0; f = 1 MHz – 0.4 – pF V R = 1 V; f = 1 MHz – 0.3 0.55 pF V R = 5 V; f = 1 MHz – 0.22 0.35 pF r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 – 25 40 Ω I F = 1 mA; f = 100 MHz; note 1 – 14 25 Ω I F = 10 mA; f = 100 MHz; note 1 – 3 5 Ω |s 21| 2 isolation V R = 0; f = 900 MHz – 20.4 – dB V R = 0; f = 1800 MHz – 17.3 – dB V R = 0; f = 2450 MHz – 15.5 – dB |s 21| 2 insertion loss I F = 0.5 mA; f = 900 MHz – 1.74 – dB I F = 0.5 mA; f = 1800 MHz – 1.79 – dB I F = 0.5 mA; f = 2450 MHz – 1.88 – dB |s 21| 2 insertion loss I F = 1 mA; f = 900 MHz – 1.03 – dB I F = 1 mA; f = 1800 MHz – 1.09 – dB I F = 1 mA; f = 2450 MHz – 1.15 – dB |s 21| 2 insertion loss I F = 10 mA; f = 900 MHz – 0.26 – dB I F = 10 mA; f = 1800 MHz – 0.32 – dB I F = 10 mA; f = 2450 MHz – 0.34 – dB

S23–2/2 BAP50-02 10 3 10 2 04 8 1 2 1 6 2 0I F (mA ) r D ( Ω ) 600 400 200 010 -1 1 10 10 2 V R ( V ) C d (pF) f = 100 MHz; T j =25°C f = 1 MHz; T j =25°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT τ L charge carrier life time when switched from I F =10 mA to – 1.05 – µ s I R = 6 mA; R L = 100 Ω; measured at I R =3 mA L S series inductance I F = 100 mA; f = 100 MHz – 0.6 – nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL P ARAMETER V ALUE UNIT R th j-s thermal resistance from junction to soldering-point 85 K/W -10 -15 -20 -25 f (GHz ) 0.5 1 1.5 2 2.5 3 f (GHz ) |s 21| 2(dB) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. |s 21| 2(dB) 0.5 1 1.5 2 2.5 3 I F =10 mA. I F = 1 mA. I F = 0.5 mA. Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25°C. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25°C.