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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR (PNP)
FEATURES
Power Amplifier Applications MAXIMUM RATINGS (T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARA CTERISTICS (Ta=25℃ unless other wise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -6 V Collector cut-off current ICBO V CB=-20V,IE=0 -0.5 µA Emitter cut-off current IEBO V EB=-5V,IC=0 -0.5 µA DC current gain hFE V CE=-2V,IC=-500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-4A,IB=-100mA -1 V Transition frequency fT V CE=-6V,IC=-50mA,f=30MHz 120 MHz Collector output capacitance Cob V CB=-20V,IE=0,f=1MHz 60 pF CLASSIFICATION OF h FE Rank P Q R Range 82-180 120-270 180-390 TO-251-3L 1.BASE 2.COLLECTOR 3.EMITTER www.cj-elec.com 1 C,Nov,2014
www.cj-elec.com 2 C,Nov,2014 Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 1.050 1.350 0.042 0.054 B 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 5.700 0.213 0.224 e e1 4.500 4.700 0.177 0.185 L 7.500 7.900 0.295 0.311 Symbol Dimensions In Millimeters Dimensions In Inches 2.300 TYP. 0.091 TYP.