B1274

2SB1274 JIANGSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 3

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR (PNP)

FEATURES

z Wide ASO (Adoption of MBIT Process). z Low Saturation Voltage. z High Reliability. z High Breakdown Voltage. MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector- Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -3 A P C Collector Power Dissipation 2 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =-1mA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-5mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-1mA, I C =0 -6 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-4V, I C =0 -0.1 μA h FE(1) V CE =-5V, I C =-500mA 70 280 DC current gain h FE(2) V CE =-5V, I C =-3A 20 Collector-emitter saturation voltage V CE(sat) I C =-2A, I B =-200mA -1 V Base-emitter voltage V BE V CE =-5V, I C =-500mA -1 V Transition frequency f T V CE =-5V, I C =-500mA 100 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 60 pF CLASSIFICATION OF h FE(1) Rank Q R S Range 70-140 100-200 140-280 TO-220-3L 1. BASE 2. COLLECTOR 3. EMITTER www.cj-elec.com 1 C,Nov,2014

0.0 0.5 1.0 1.5 2.0 2.5 -300 -400 -500 -600 -700 -800 -900 -1000 -10 -100 -1000 -1 -10 -100 -1000 100 1000 -1 -10 -100 -1000 -400 -600 -800 -1000 -1 -10 -100 -1000 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 Static Characteristic 2SB1274 P C —— T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (W) I C —— V BE h FE —— I C -3000 COMMON EMITTER V CE = -5V BASE-EMMITER VOLTAGE V BE (mV) COLLECTOR CURRENT I C (mA) T a =25 T a =100 Typical Characteristics -3000 COMMON EMITTER V CE = -5V T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -3000 β=10 V BEsat —— I C BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 -3000 β=10 V CEsat —— I C T a =100 T a =25 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) -6.4mA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) -8.0mA -7.2mA -5.6mA -2.4mA -4.0mA -4.8mA -3.2mA -1.6mA I B =-0.8mA Typical Characteristics www.cj-elec.com 2 C,Nov,2014

www.cj-elec.com 3 C,Nov,2014 Min Max Min Max A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP2.540 TYP