ATT605

ATT605 POSEICO | Alldatasheet

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PHASE CONTROL MODULE ATT605 Repetitive voltage up to 1200 V Mean forward current 649 A Surge current 17 kA FINAL SPECIFICATION apr 17 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse/off-state voltage 140 1200 V V RSM Non-repetitive peak reverse voltage 140 1300 V I RRM/DRM Repetitive peak reverse/off-state current 140 50 mA CONDUCTING I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled 649 A I T (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 893 A I TSM Surge forward current Sine wave, 10 ms 140 17 kA I² t I² t without reverse voltage 1445 x 103 A²s V T On-state voltage On-state current = 1600 A 25 1,37 V V T(TO) Threshold voltage 140 0,81 V r T On-state slope resistance 140 0,250 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1260 A; gate 10V, 5W 140 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 140 500 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10W , tr=.5 µs 25 3,0 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 100 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 630 A 140 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=12V, gate open circuit 25 300 mA I L Latching current, typical VD=12V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=12V 25 3,50 V I GT Gate trigger current VD=12V 25 250 mA V GD Non-trigger gate voltage, min. VD=VDRM 140 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 2 W MOUNTING R th(j-c) Thermal impedance, DC Junction to case, per element 70,0 °C/kW R th(c-h) Thermal impedance Case to heatsink, per element 20,0 °C/kW T j Operating junction temperature -30 / 140 °C V ins RMS insulation voltage 50 hz , circuit to base, all terminal shorted 25 3000 V T Mounting torque Case to heatsink 4 to 6 kN T Mounting torque Busbars to terminal 12 to 18 kN Mass 1500 g ORDERING INFORMATION : ATT605 S 12 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com

ATT605 PHASE CONTROL MODULE FINAL SPECIFICATION apr 17 - ISSUE : 02 DISSIPATION CHARACTERISTICS SQUARE WAVE DC180°120°90°60°30°80 100 110 120 130 140 150 0 200 400 600 800 1000 Tcase [°C] IF(AV) [A] DC 180° 120°90° 60° 30° 100 200 300 400 500 600 700 800 900 0 100 200 300 400 500 600 700 800 900 PF(AV) [W] IF(AV) [A]

ATT605 PHASE CONTROL MODULE FINAL SPECIFICATION apr 17 - ISSUE : 02 DISSIPATION CHARACTERISTICS SINE WAVE 100 110 120 130 140 150 0 200 400 600 800 Tcase [°C] IF(AV) [A] 180° 120° 90° 60° 30° 100 200 300 400 500 600 700 800 900 0 200 400 600 800 PF(AV) [W] IF(AV) [A]

ATT605 PHASE CONTROL MODULE FINAL SPECIFICATION apr 17 - ISSUE : 02 Distributed by 500 1000 1500 2000 2500 0,5 0,8 1,1 1,4 On-State Current [A] On-State Voltage [V] ON-STATE CHARACTERISTIC Tj = 140 °C 0,001 0,01 0,1 1 10 100 Zth j-h [°C/kW] t[s] TRANSIENT THERMAL IMPEDANCE 1 10 100 ITSM [kA] n° cycles SURGE CHARACTERISTIC Tj = 140 °C All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.