ARF771LT POSEICO | Alldatasheet
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FAST RECOVERY DIODE ARF771LT FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 4500 V SNUBBERLESS OPERATION Mean forward current 1730 A LOW LOSSES SOFT RECOVERY Surge current 28 kA TARGET SPECIFICATION mar 03 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 140 4500 V V RSM Non-repetitive peak reverse voltage 140 4600 V I RRM Repetitive peak reverse current V=VRRM 140 150 mA V DC LINK Permanent DC voltage 140 2800 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1730 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1790 A I FSM Surge forward current Sine wave, 10 ms 140 28 kA I² t I² t reapplied reverse voltage up to 50% VRSM 3920 x1E3 A²s V FM Forward voltage Forward current = =2500 A 140 3.95 V V F(TO) Threshold voltage 140 1.95 V r F Forward slope resistance 140 0.800 mohm SWITCHING Q rr Reverse recovery charge I F = 2500 A di/dt= 250 A/µs 140 µC I rr Peak reverse recovery current VR = 100 V 140 A t rr Reverse recovery time I F = 2500 A µs Q rr Reverse recovery charge di/dt= 1000 A/µs µC I rr Peak reverse recovery current VR = 2800 V 140 A s Softness (s-factor), min E OFF Turn off energy dissipation 7J V FR Peak forward recovery di/dt= 500 A/µs 140 65 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 9.5 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 2 °C/kW T j Operating junction temperature -30 / 140 °C F Mounting force 46.0 / 54.0 kN Mass 1150 g ORDERING INFORMATION : ARF771LT S 45 standard specification VRRM/100 2400 3500 1500 POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
ARF771LT FAST RECOVERY DIODE TARGET SPECIFICATION mar 03 - ISSUE : 2 Distributed by FORWARD CHARACTERISTIC Tj = 140 °C 500 1000 1500 2000 2500 3000 3500 1.2 2.2 3.2 4.2 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 140 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO