ARF744 POSEICO | Alldatasheet
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FAST RECOVERY DIODE ARF744 Repetitive voltage up to 2500 V Mean forward current 3725 A Surge current 48 kA FINAL SPECIFICATION apr 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 2500 V V RSM Non-repetitive peak reverse voltage 150 2600 V I RRM Repetitive peak reverse current V=VRRM 150 150 mA CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 3725 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 3800 A I FSM Surge forward current Sine wave, 10 ms 150 48 kA I² t I² t reapplied reverse voltage up to 50% VRSM 11520 x1E3 A²s V FM Forward voltage Forward current =2000 A 25 1.35 V V F(TO) Threshold voltage 150 0.85 V r F Forward slope resistance 150 0.160 mohm SWITCHING t rr Reverse recovery time I F = 1000 A 5 µs Q rr Reverse recovery charge di/dt= 60 A/µs 150 500 µC I rr Peak reverse recovery current VR = 50 V 200 A s Softness (s-factor), min 0.5 V FR Peak forward recovery di/dt= 400 A/µs 150 10 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 11 °C/kW T j Operating junction temperature -30 / 150 °C F Mounting force 46.0 / 54.0 kN Mass 1700 g ORDERING INFORMATION : ARF744 S 25 standard specification VRRM/100 Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori
ARF744 FAST RECOVERY DIODE FINAL SPECIFICATION apr 97 - ISSUE : 02 DISSIPATION CHARACTERISTICS SQUARE WAVE SINE WAVE DC180° 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1000 2000 3000 4000 5000 Mean Forward Current [A] Power Dissipation [W] 60° 90° 30° 120° ANSALDO 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1000 2000 3000 4000 5000 Mean Forward Current [A] Power Dissipation [W] 180° 120° 90° 60° 30°
ARF774 FAST RECOVERY DIODE FINAL SPECIFICATION apr 97 - ISSUE : 01 SWITCHING CHARACTERISTICS ANSALDO REVERSE RECOVERY CHARGE Tj = 125 °C 500 1000 1500 2000 2500 3000 0 100 200 300 400 di/dt [A/µs] Qrr [µC] 250 A 500 A 1000 A FORWARD RECOVERY VOLTAGE 0 200 400 600 800 1000 1200 di/dt [A/µs] VFR [V] Tj = 125 °C Tj = 25 °C IF VFR VF Irr Vr ta tbta = Irr / (di/dt) tb = trr - ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) IF d i/d t REVERSE RECOVERY CURRENT Tj = 125 °C 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 100 200 300 400 di/dt [A/µs] Irr [A] 250 A 500 A 1000 A
ARF744 FAST RECOVERY DIODE FINAL SPECIFICATION apr 97 - ISSUE : 02 Distributed by FORWARD CHARACTERISTIC Tj = 150 °C 2000 4000 6000 8000 10000 12000 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 150 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. ANSALDO