ATF743 POSEICO | Alldatasheet

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FAST SWITCHING THYRISTOR ATF743 Repetitive voltage up to 2000 V Mean on-state current 2595 A Surge current 36 kA FINAL SPECIFICATION Turn-off time 70 µs mag 06 - ISSUE : 02 Symbol Characteristic Conditions Tj [° C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2000 V V RSM Non-repetitive peak reverse voltage 125 2100 V V DRM Repetitive peak off-state voltage 125 2000 V I RRM Repetitive peak reverse current V=VRRM 125 300 mA I DRM Repetitive peak off-state current V=VDRM 125 300 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55° C, doub le side cooled 2595 A I T (AV) Mean on-state current 180° sin, 1 kHz, Th=55° C, dou ble side cooled 2390 A I TSM Surge on-state current, non repetitive sine wave, 1 0 ms 125 36 kA I² t I² t without reverse voltage 6480 x1E3 A²s V T On-state voltage On-state current = 4000 A 125 2,02 V V T(TO) Threshold voltage 125 1,30 V r T On-state slope resistance 125 0,180 mohm SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 10V 5 ohm 125 500 A/µ s dv/dt Critical rate of rise of off-state voltage, mi n Linear ramp up to 75% of VDRM 125 600 V/µs td Gate controlled delay time, typical VD=200V, gate source 20V, 10 ohm , tr=.5 µs 25 0,8 µs tq Circuit commutated turn-off time di/dt = 60 A/µs, I= 1000 A I = 2000 A 125 70 µs dV/dt = 200 V/µs , up to 80% VDRM Q rr Reverse recovery charge di/dt = 60 A/µs, I= 1000 A I = 4000 A 125 800 µC I rr Peak reverse recovery current VR = 50 V 350 A I H Holding current, typical VD=5V, gate open circuit 25 mA I L Latching current, typical VD=12V, tp=30µs 25 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation Pulse width 100 µs 25 150 W P G(AV) Average gate power dissipation 25 2 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double s ide cooled 11 ° C/kW T j Operating junction temperature -30 / 125 ° C F Mounting force 35.0 / 40.0 kN Mass 1700 g tq code D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs ORDERING INFORMATION : ATF743 S 20 U tq code M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs standard specification VDRM&VRRM/100 T 60 µs U 70 µs W 80 µs X 100µs Y 150µs POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141

ATF743 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 06 - ISSUE : 02 SWITCHING CHARACTERISTICS REVERSE RECOVERY CURRENT Tj = 125 ° C 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 di/dt [A/µs] Irr [A] 4000 A 2000 A 1000 A ta = Irr / (di/dt) tb = trr - ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) di/dt Irr IF ta tb Vr REVERSE RECOVERY CHARGE Tj = 125 ° C 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 di/dt [A/µs] Qrr [µC] 1000 A 2000 A 4000 A POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

ATF743 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 06 - ISSUE : 02 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by ON-STATE CHARACTERISTIC Tj = 125 ° C 1000 2000 3000 4000 5000 6000 7000 8000 9000 On-state Voltage [V] On-state Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0,001 0,01 0,1 1 10 100 t[s] Zth j-h [° C/kW] SURGE CHARACTERISTIC Tj = 125 ° C 1 10 100 n° cycles ITSM [kA] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbol s over shaded background) and characteristics is reported.