ATF1047 POSEICO | Alldatasheet

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FAST SWITCHING THYRISTOR ATF1047 Repetitive voltage up to 1400 V Mean on-state current 1305 A Surge current 16 kA FINAL SPECIFICATION Turn-off time 30 µs mag 06 - ISSUE : 06 Symbol Characteristic Conditions Tj [° C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1400 V V RSM Non-repetitive peak reverse voltage 125 1500 V V DRM Repetitive peak off-state voltage 125 1400 V I RRM Repetitive peak reverse current V=VRRM 125 100 mA I DRM Repetitive peak off-state current V=VDRM 125 100 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55° C, doub le side cooled 1305 A I T (AV) Mean on-state current 180° sin, 1 kHz,T h=55° C, doub le side cooled 1230 A I TSM Surge on-state current, non repetitive sine wave, 1 0 ms 125 16 kA I² t I² t without reverse voltage 1280 x1E3 A²s V T On-state voltage On-state current = 2000 A 25 2 V V T(TO) Threshold voltage 125 1,32 V r T On-state slope resistance 125 0,230 mohm SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 2000 A, gate 20V 10 ohm 125 500 A/ µs dv/dt Critical rate of rise of off-state voltage, mi n Linear ramp up to 70% of VDRM 125 600 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0,6 µs tq Circuit commutated turn-off time di/dt = 20 A/µs, I= 1000 A I = 800 A 125 30 µs dV/dt = 200 V/µs , up to 75% VDRM Q rr Reverse recovery charge di/dt = 60 A/µs, I= 1000 A I = 1000 A 125 650 µC I rr Peak reverse recovery current VR = 50 V 230 A I H Holding current, typical VD=5V, gate open circuit 25 8 0 mA I L Latching current, typical VD=5V, tp=30µs 25 230 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation Pulse width 100 µs 25 150 W P G(AV) Average gate power dissipation 25 3 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double s ide cooled 26 ° C/kW T j Operating junction temperature -30 / 125 ° C F Mounting force 14.0 / 17.0 kN Mass 500 g tq code D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs ORDERING INFORMATION : ATF1047 S 14 M tq code M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs standard specification VDRM&VRRM/100 T 60 µs U 70 µs W 80 µs X 100µs Y 150µs POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141

ATF1047 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 06 - ISSUE : 06 SWITCHING CHARACTERISTICS REVERSE RECOVERY CURRENT Tj = 125 ° C 200 400 600 800 0 50 100 150 200 250 300 350 400 di/dt [A/µs] Irr [A] 1000 A 500 A 250 A ta = Irr / (di/dt) tb = trr - ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) di/dt Irr IF ta tb Vr REVERSE RECOVERY CHARGE Tj = 125 ° C 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 di/dt [A/µs] Qrr [µC] 250 A 500 A 1000 A POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

ATF1047 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 06 - ISSUE : 06 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by ON-STATE CHARACTERISTIC Tj = 125 ° C 500 1000 1500 2000 2500 3000 3500 4000 4500 On-state Voltage [V] On-state Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0,001 0,01 0,1 1 10 100 t[s] Zth j-h [° C/kW] SURGE CHARACTERISTIC Tj = 125 ° C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO S.p.A reserv es the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbol s over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO