AT980

AT980 POSEICO | Alldatasheet

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PHASE CONTROL THYRISTOR AT980 Repetitive voltage up to 6000 V Mean forward current 2680 A Surge current 50 kA FINAL SPECIFICATION Feb. 17 - Issue: 6 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 120 6000 V V RSM Non-repetitive peak reverse voltage 120 6100 V V DRM Repetitive peak off-state voltage 120 6000 V I RRM Repetitive peak reverse current V=VRRM 120 300 mA I DRM Repetitive peak off-state current V=VDRM 120 300 mA CONDUCTING I T (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 2680 A I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled 1929 A I TSM Surge forward current Sine wave, 10 ms 120 50 kA I² t I² t without reverse voltage 12500 x 103 A²s V T On-state voltage On-state current = 6280 A 25 2,78 V V T(TO) Threshold voltage 120 1,30 V r T On-state slope resistance 120 0,235 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM ; gate 10V, 5W 120 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 120 1000 V/µs t d Gate controlled delay time, typical VD=100V; gate source 10V, 10W , tr=.5 µs 25 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 600 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 2150 A 120 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=12V, tp=30µs 25 1000 mA GATE V GT Gate trigger voltage VD=12V 25 3,50 V I GT Gate trigger current VD=12V 25 400 mA V GD Non-trigger gate voltage, min. VD=VDRM 120 0,25 V V FGM Peak gate voltage (forward) 10 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 10 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 3 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 8,5 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 1,0 °C/kW T j Operating junction temperature -30 / 120 °C F Mounting force 80.0 / 100.0 kN Mass 3000 g ORDERING INFORMATION : AT980 S 60 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com

AT980 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 DISSIPATION CHARACTERISTICS SQUARE WAVE 100 110 120 130 0 500 1000 1500 2000 2500 3000 3500 4000 Th [°C] IF(AV) [A] DC 180° 120°90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 500 1000 1500 2000 2500 3000 3500 4000 PF(AV) [W] IF(AV) [A]

AT980 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 DISSIPATION CHARACTERISTICS SINE WAVE 180°120°90°60°30° 100 110 120 130 0 500 1000 1500 2000 2500 3000 Th [°C] IF(AV) [A] 180°120° 90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 8000 0 500 1000 1500 2000 2500 3000 PF(AV) [W] IF(AV) [A]

AT980 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1 2 3 4 On-State Current [A] On-State Voltage [V] ON-STATE CHARACTERISTIC Tj = 120 °C 0,001 0,01 0,1 1 10 100 Zth j-h [°C/kW] t[s] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 1 10 100 ITSM [kA] n° cycles SURGE CHARACTERISTIC Tj = 120 °C All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.