AT940S29

AT940 POSEICO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

PHASE CONTROL THYRISTOR AT940 Repetitive voltage up to 2900 V Mean on-state current 4687 A Surge current 75 kA FINAL SPECIFICATION Feb. 17 - Issue: 6 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2900 V V RSM Non-repetitive peak reverse voltage 125 3000 V V DRM Repetitive peak off-state voltage 125 2900 V I RRM Repetitive peak reverse current V=VRRM 125 300 mA I DRM Repetitive peak off-state current V=VDRM 125 300 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 4687 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 3638 A I TSM Surge on-state current sine wave, 10 ms 125 75,0 kA I² t I² t without reverse voltage 28125 x1E3 A²s V T On-state voltage On-state current = 7500 A 25 1,55 V V T(TO) Threshold voltage 125 1,00 V r T On-state slope resistance 125 0,070 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM, gate 10V 5ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 1000 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=5 µs 25 . µs tq Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 500 µs Q RR Reverse recovery charge di/dt=-20 A/µs, I= 2150 A 125 . µC I RR Peak reverse recovery current VR= 50 V . A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=12V, tp=30µs 25 1000 mA GATE V GT Gate trigger voltage VD=12V 25 3,5 V I GT Gate trigger current VD=12V 25 400 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 10 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 10 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 3 W MOUNTING R th(j-c) Thermal impedance, DC Junction to case, double side cooled 6,0 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 1,5 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 80.0 / 100.0 kN Mass 3000 g ORDERING INFORMATION : AT940 S 29 standard specification VDRM&VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com Page 1 of 6

AT940 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 DISSIPATION CHARACTERISTICS SQUARE WAVE DC 180° 120°90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 3000 4000 5000 6000 7000 PF(AV) [W] IF(AV) [A] 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 Th [°C] IF(AV) [A] Page 2 of 6

AT940 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 DISSIPATION CHARACTERISTICS SINE WAVE 180°120°90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1000 2000 3000 4000 5000 PF(AV) [W] IF(AV) [A] 120°90°60°30° 180° 100 110 120 130 0 1000 2000 3000 4000 5000 Th [°C] IF(AV) [A] Page 3 of 6

AT940 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 di/dt [A/µs] di/dt [A/µs] REVERSE RECOVERY CHARGE Tj = 125°C - IT = 3000 A REVERSE RECOVERY CURRENT Tj = 125°C - IT = 3000 A Qrr [µC] Irr [A] Page 4 of 6

AT940 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by 2000 4000 6000 8000 10000 12000 14000 16000 0,6 1,1 1,6 2,1 On-state Current [A] On-state Voltage [V] ON-STATE CHARACTERISTIC Tj = 125 °C 0,0001 0,01 1 100 Zth j-c [°C/kW] t[s] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 1 10 100 ITSM [kA] n° cycles SURGE CHARACTERISTIC Tj = 125 °C All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. i 1 2 3 4 Ai [°C/kW] 2,738 1,779 1,186 0,297 τi [s] 2,4 1,70 0,16 0,001 𝑍𝑡ℎ𝑗−𝑐𝑡 = 𝑖=1 𝑛 𝐴𝑖∗ 1−𝑒 𝜏𝑖 °180 °120 °90 °60 °30 Square 0,39 0,71 1,01 1,52 2,54 Sine 0,75 1,06 1,59 2,61 4,04 ∆Rth [°K/kW]Wave Page 5 of 6

AT940 PHASE CONTROL THYRISTOR FINAL SPECIFICATION Feb. 17 - Issue: 6 Annex Note: This Zth j-h (t) curve takes into account of a contact thermal resistance value Rth c-h = 1,5 °C/kW. Mounting recommendations must be followed in order to match the specified contact thermal resistance value. 0,0001 0,001 0,01 0,1 1 10 100 Zth j-h [°C/kW] t[s] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED i 1 2 3 4 Ai [°C/kW] 4,320 1,701 1,183 0,296 τi [s] 3,400 1,800 0,160 0,001 𝑍𝑡ℎ𝑗−ℎ𝑡 = 𝑖=1 𝑛 𝐴𝑖∗ 1−𝑒 𝜏𝑖 Page 6 of 6