AT505

AT505 POSEICO | Alldatasheet

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PHASE CONTROL THYRISTOR AT505 Repetitive voltage up to 1600 V Mean on-state current 430 A Surge current 5.6 kA FINAL SPECIFICATION gen 03 - ISSUE : 05 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1600 V V RSM Non-repetitive peak reverse voltage 125 1700 V V DRM Repetitive peak off-state voltage 125 1600 V I RRM Repetitive peak reverse current V=VRRM 125 30 mA I DRM Repetitive peak off-state current V=VDRM 125 30 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 430 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 340 A I TSM Surge on-state current sine wave, 10 ms 125 5.6 kA I² t I² t without reverse voltage 157 x1E3 A²s V T On-state voltage On-state current = 800 A 25 1.55 V V T(TO) Threshold voltage 125 1.0 V r T On-state slope resistance 125 0.680 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs 25 1.6 µs tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 200 µs Q rr Reverse recovery charge di/dt=-20 A/µs, I= 290 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=5V 25 3.5 V I GT Gate trigger current VD=5V 25 200 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V V FGM Peak gate voltage (forward) 20 V I FGM Peak gate current 8A V RGM Peak gate voltage (reverse) 5V P GM Peak gate power dissipation Pulse width 100 µs 75 W P G Average gate power dissipation 1 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 95 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 20 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 4.9 / 5.9 kN Mass 55 g ORDERING INFORMATION : AT505 S 16 standard specification VDRM&VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510

AT505 PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 DISSIPATION CHARACTERISTICS SQUARE WAVE DC 180° 120°90° 60° 30° 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 I F(AV) [A] PF(AV) [W] DC 180° 120° 90°60°30° 100 110 120 130 0 100 200 300 400 500 600 IF(AV) [A] Th [°C] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

AT505 PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 DISSIPATION CHARACTERISTICS SINE WAVE 180° 120° 90° 60° 30° 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 I F(AV) [A] PF(AV) [W] 180° 120° 90° 60° 30° 100 110 120 130 0 100 200 300 400 500 600 IF(AV) [A] Th [°C] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

AT505 PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by ON-STATE CHARACTERISTIC Tj = 125 °C 200 400 600 800 1000 1200 1400 0.6 1.1 1.6 On-state Voltage [V] On-state Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 125 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO S.p.A reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO