AT202 POSEICO | Alldatasheet

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PHASE CONTROL THYRISTOR AT202 Repetitive voltage up to 800 V Mean on-state current 635 A Surge current 6 kA TARGET SPECIFICATION Feb 97 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 800 V V RSM Non-repetitive peak reverse voltage 150 900 V V DRM Repetitive peak off-state voltage 150 800 V I RRM Repetitive peak reverse current V=VRRM 150 30 mA I DRM Repetitive peak off-state current V=VDRM 150 30 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 635 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 575 A I TSM Surge on-state current sine wave, 10 ms 150 6 kA I² t I² t without reverse voltage 180 x1E3 A²s V T On-state voltage On-state current = 800 A 150 1.19 V V T(TO) Threshold voltage 150 0.8 V r T On-state slope resistance 150 0.490 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm 150 320 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 150 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs 25 1.6 µs tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 200 µs Q rr Reverse recovery charge di/dt=-20 A/µs, I= 290 A 150 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=5V 25 3.5 V I GT Gate trigger current VD=5V 25 200 mA V GD Non-trigger gate voltage, min. VD=VDRM 150 0.25 V V FGM Peak gate voltage (forward) 20 V I FGM Peak gate current 8 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 75 W P G Average gate power dissipation 1 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 95 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 20 °C/kW T j Operating junction temperature -30 / 150 °C F Mounting force 4.9 / 5.9 kN Mass 55 g ORDERING INFORMATION : AT202 S 08 standard specification VDRM&VRRM/100 Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori

AT202 PHASE CONTROL THYRISTOR TARGET SPECIFICATION Feb 97 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE DC 180°120° 90° 60° 30° 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 IF(AV) [A] PF(AV) [W] ANSALDO DC 180° 120° 90° 60° 30° 100 110 120 130 140 150 0 200 400 600 800 1000 IF(AV) [A] Th [°C]

AT202 PHASE CONTROL THYRISTOR TARGET SPECIFICATION Feb 97 - ISSUE : 03 DISSIPATION CHARACTERISTICS SINE WAVE 180° 120° 90° 60° 30° 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 IF(AV) [A] PF(AV) [W] ANSALDO 180° 120° 90° 60° 30° 100 110 120 130 140 150 0 200 400 600 800 1000 IF(AV) [A] Th [°C] ANSALDO

AT202 PHASE CONTROL THYRISTOR TARGET SPECIFICATION Feb 97 - ISSUE : 03 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by ON-STATE CHARACTERISTIC Tj = 150 °C 200 400 600 800 1000 1200 1400 1600 1800 2000 0.6 1.1 1.6 On-state Voltage [V] On-state Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 150 °C 1 10 100 n° cycles ITSM [kA] ANSALDO All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.