AS358_13 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Internally Frequency Compensated for Unity Gain
  • Large V oltage Gain: 100dB (Typical)
  • Low Input Bias Current: 20nA (Typical)
  • Low Input Offset V oltage: 2mV (Typical)
  • Low Supply Current: 0.5mA (Typical)
  • Wide Power Supply V oltage: Single Supply: 3V to 36V Dual Supplies: ± 1.5V to ± 18V
  • Input Common Mode V oltage Range Includes Ground
  • Large Output V oltage Swing: 0V to VCC -1.5V

Applications

  • Battery Charger
  • Cordless Telephone
  • Switching Power Supply

Figure 1. Package Types of AS358/358A

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet

Ordering Information

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Package Temperature Range Part Number Marking ID Packing Type Lead Free Green Lead Free Green SOIC-8 -40 to 85oC AS358M-E1 AS358M-G1 AS358M-E1 AS358M-G1 Tube AS358MTR-E1 AS358MTR-G1 AS358M-E1 AS358M-G1 Tape & Reel AS358AM-E1 AS358AM-G1 AS 358AM-E1 AS358AM-G1 Tube AS358AMTR-E1 AS358AMTR-G1 AS35 8AM-E1 AS358AM-G1 Tape & Reel DIP-8 -40 to 85 oC AS358P-E1 AS358P-G1 AS358P-E1 AS358P-G1 Tube AS358AP-E1 AS358AP-G1 AS 358AP-E1 AS358AP-G1 Tube TDIP-8 -40 to 85 oC AS358PT-G1 AS358PT-G1 Tube TSSOP-8 -40 to 85oC AS358GTR-E1 AS358GTR-G1 EG3A GG3A Tape & Reel MSOP-8 -40 to 85oC AS358MMTR-E1 AS358MMTR-G1 AS358MM-E1 AS358MM-G1 Tape & Reel Circuit Type Package E1: Lead Free G1: Green AS358 TR: Tape and Reel Blank: Tube M: SOIC-8 P: DIP-8 Blank: AS358 A: AS358A G: TSSOP-8 MM: MSOP-8 PT: TDIP-8

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet Parameter Symbol Value Unit Power Supply V oltage VCC 40 V Differential Input V oltage VID 40 V Input V oltage VIC -0.3 to 40 V Power Dissipation (TA=25oC) PD DIP-8 830 mW SOIC-8 550 TSSOP-8 500 MSOP-8 470 Operating Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10 Seconds) TLEAD 260 oC Note 1: Stresses greater than those li sted under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Ex posure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Absolute Maximum Ratings (Note 1) Recommended Operating Conditions Parameter Symbol Min Max Unit Supply V oltage V CC 33 6V Ambient Operating Temperature Range T A -40 85 oC

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet Limits in standard typeface are for T A=25oC, bold typeface applies over -40 oC to 85oC (Note 2), V CC=5V , GND=0V , unless otherwise specified.

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit Input Offset V oltage VIO VO=1.4V , RS=0Ω, VCC=5V to 30V AS358 25 mV7 AS358A 23 Average Temperature Coeffi- cient of Input Offset V oltage ΔVIO/ΔT TA=-40 to 85oC 7 μV/oC Input Bias Current IBIAS IIN+ or IIN-, VCM=0V 20 200 nA 200 Input Offset Current IIO IIN+ - IIN-, VCM=0V 53 0 nA 100 Input Common Mode V oltage Range (Note 3) V IR VCC=30V 0 VCC -1.5 V Supply Current ICC TA=-40 to 85oC, RL=∞, VCC=30V 0.7 2 mA TA=-40 to 85oC, RL=∞, VCC=5V 0.5 1.2 Large Signal V oltage Gain GV VCC=15V , VO=1V to 11V , RL ≥ 2kΩ 85 100 dB Common Mode Rejection Ratio CMRR DC, V CM=0V to (VCC-1.5)V 60 70 dB Power Supply Rejection Ratio PSRR VCC=5V to 30V 70 100 dB Channel Separation CS f=1kHz to 20kHz -120 dB Output Current Source ISOURCE VIN+=1V , VIN-=0V , VCC=15V , VO=2V 20 40 mA Sink ISINK VIN+=0V , VIN-=1V , VCC=15V , VO=2V 10 15 mA VIN+=0V ,VIN-=1V ,VCC=15V , VO=0.2V 12 50 μA Output Short Circuit Current to Ground ISC VCC=15V 40 60 mA Output V oltage Swing VOH VCC=30V , RL=2kΩ 26 V26 VCC=30V , RL=10kΩ 27 28 VOL VCC=5V , RL= 10kΩ 52 0 mV Thermal Resistance (Junction to Case) θJC DIP-8 53 oC/W SOIC-8 78 Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet Mechanical Dimensions DIP-8 Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.600(0.378) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP Note: Eject hole, oriented hole and mold mark is optional.

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet Mechanical Dimensions (Continued) TDIP-8 Unit: mm(inch) 1.500(0.059) 1.700(0.067) 3.300(0.130)MAX 0.600(0.024) 0.800(0.031) 0.940(0.037) 1.040(0.041) 1.470(0.058) 1.670(0.066) 2.540(0.100) BCS 3.100(0.122) 3.500(0.138) 7.570(0.298) 8.200(0.323) 8.200(0.323) 9.400(0.370) 9.150(0.360) 6.450(0.254) 0.500(0.020)MIN 0.390(0.015) 0.550(0.022) Note: Eject hole, oriented hole and mold mark is optional.

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) φ R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) SEE DETAIL A DETAIL A 2.900(0.114) 0.050(0.002) MAX 1.950(0.077) 12 ° TOP & BOTTOM R0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) GAGE PLANE SEATING PLANE 0.250(0.010) 3.100(0.122) 4.500(0.177) TYP 0.650(0.026) TYP TYP TYP R0.090(0.004) REF Note: Eject hole, oriented hole and mold mark is optional.

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedJan. 2013 Rev. 2. 2 Data Sheet MSOP-8 Unit: mm(inch) Mechanical Dimensions (Continued) 4.700(0.185) 0.650(0.026)TYP 5.100(0.201) 0.410(0.016) 0.650(0.026) 0.000(0.000) 0.200(0.008) 0.300(0.012)TYP 3.100(0.122) 2.900(0.114) 0.800(0.031) 1.200(0.047) 3.100(0.122) 2.900(0.114) 0.150(0.006)TYP 0.760(0.030) 0.970(0.038) Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277