AS358 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Internally Frequency Compensated for Unity Gain
  • Large V oltage Gain: 100dB (Typical)
  • Low Input Bias Current: 20nA (Typical)
  • Low Input Offset V oltage: 2mV (Typical)
  • Low Supply Current: 0.5mA (Typical)
  • Wide Power Supply V oltage: Single Supply: 3V to 36V Dual Supplies: ±1.5V to ±18V
  • Input Common Mode V oltage Range Includes Ground
  • Large Output V oltage Swing: 0V to V CC -1.5V

Applications

  • Battery Charger
  • Cordless Telephone
  • Switching Power Supply

Figure 1. Package Types of AS358/358A

8 VCC

7 OUTPUT 2

6 INPUT 2-

5 INPUT 2+

Figure 2. Pin Configuration of AS358/358A (Top View) Figure 3. Functional Block Diagram of AS358/358A

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet

Ordering Information

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Package Temperature Range Part Number Marking ID Packing Type Tin Lead Lead Free Tin Lead Lead Free SOIC-8 -40 to 85oC AS358M AS358M-E1 AS358M AS358M-E1 Tube AS358MTR AS358MTR-E1 AS358M AS358M-E1 Tape & Reel AS358AM-E1 AS358AM-E1 Tube AS358AMTR-E1 AS358AM-E1 Tape & Reel DIP-8 -40 to 85oC AS358P AS358P-E1 AS358P AS358P-E1 Tube AS358AP-E1 AS358AP-E1 Tube TSSOP-8 -40 to 85oC AS358G-E1 EG3A Tube AS358GTR-E1 EG3A Tape & Reel MSOP-8 -40 to 85oC AS358MM-E1 AS358MM-E1 Tube AS358MMTR-E1 AS358MM-E1 Tape & Reel Circuit Type Package E1: Lead Free Blank: Tin Lead AS358 TR: Tape and Reel Blank: Tube M: SOIC-8 P: DIP-8 Blank: AS358 A: AS358A G: TSSOP-8 MM: MSOP-8

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet Parameter Symbol Value Unit Power Supply V oltage VCC 40 V Differential Input V oltage VID 40 V Input V oltage VIC -0.3 to 40 V Power Dissipation (TA=25oC) PD DIP-8 830 mW SOIC-8 550 TSSOP-8 500 MSOP-8 470 Operating Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10 Seconds) TLEAD 260 oC Note 1: Stresses greater than those lis ted under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, a nd functional operation of the de vice at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolut e Maximum Ratings" for extended periods may affect device reliability. Absolute Maximum Ratings (Note 1) Recommended Operating Conditions Parameter Symbol Min Max Unit Supply V oltage V CC 33 6V Ambient Operating Temperature Range T A -40 85 oC

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit Input Offset V oltage VIO VO=1.4V , RS=0Ω, VCC=5V to 30V AS358 mV AS358A Average Temperature Coeffi- cient of Input Offset V oltage ∆VIO/∆T TA=-40 to 85oC 7 µV/oC Input Bias Current IBIAS IIN+ or IIN-, VCM=0V 20 200 nA 200 Input Offset Current IIO IIN+ - IIN-, VCM=0V 53 0 nA 100 Input Common Mode V oltage Range (Note 3) VIR VCC=30V 0 VCC -1.5 V Supply Current ICC TA=-40 to 85oC, RL=∞, VCC=30V 0.7 2 mA TA=-40 to 85oC, RL=∞, VCC=5V 0.5 1.2 Large Signal V oltage Gain GV VCC=15V , VO=1V to 11V , RL ≥ 2kΩ 85 100 dB Common Mode Rejection Ratio CMRR DC, VCM=0V to (VCC-1.5)V 60 70 dB Power Supply Rejection Ratio PSRR VCC=5V to 30V 70 100 dB Channel Separation CS f=1kHz to 20kHz -120 dB Output Current Source ISOURCE VIN+=1V , VIN-=0V , VCC=15V , VO=2V 20 40 mA Sink ISINK VIN+=0V , VIN-=1V , VCC=15V , VO=2V 10 15 mA VIN+=0V ,VIN-=1V ,VCC=15V , VO=0.2V 12 50 µA Output Short Circuit Current to Ground ISC VCC=15V 40 60 mA Output V oltage Swing VOH VCC=30V , RL=2kΩ 26 V26 VCC=30V , RL=10kΩ 27 28 VOL VCC=5V , RL= 10kΩ 52 0 mV Limits in standard typeface are for T A=25oC, bold typeface applies over -40 oC to 85oC (Note 2), V CC= 5 V, G N D = 0 V, u n l e s s otherwise specified. Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet Mechanical Dimensions DIP-8 Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) φ R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.700(0.185) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 5.100(0.201)

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) φ 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) SEE DETAIL A DETAIL A 2.900(0.114) 0.050(0.002) MAX 1.950(0.077) 12 ° TOP & BOTTOM R0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) GAGE PLANE SEATING PLANE 0.250(0.010) 3.100(0.122) 4.500(0.177) TYP 0.650(0.026) TYP TYP TYP R0.090(0.004) REF

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A BCD Semiconductor Manufacturing LimitedSep. 2006 Rev. 1. 6 Data Sheet MSOP-8 Unit: mm(inch) 4.700(0.185) 0.650(0.026)TYP 5.100(0.201) 0.410(0.016) 0.650(0.026) 0.000(0.000) 0.200(0.008) 0.300(0.012)TYP 3.100(0.122) 2.900(0.114) 0.800(0.031) 1.200(0.047) 3.100(0.122) 2.900(0.114) 0.150(0.006)TYP 0.760(0.030) 0.970(0.038) Mechanical Dimensions

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com