ARF462 POSEICO | Alldatasheet
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FAST RECOVERY DIODE ARF462 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 4500 V SNUBBERLESS OPERATION Mean forward current 435 A LOW LOSSES SOFT RECOVERY Surge current 10 kA TARGET SPECIFICATION giu 00 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 4500 V V RSM Non-repetitive peak reverse voltage 125 4600 V I RRM Repetitive peak reverse current V=VRRM 125 50 mA V DC LINK Permanent DC voltage 125 2500 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 435 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 440 A I FSM Surge forward current Sine wave, 10 ms 125 10 kA I² t I² t reapplied reverse voltage up to 50% VRSM 500 x1E3 A²s V FM Forward voltage Forward current = 1800 A 25 5.22 V V F(TO) Threshold voltage 125 2.70 V r F Forward slope resistance 125 1.400 mohm SWITCHING Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 125 µC I rr Peak reverse recovery current VR = 100 V 125 A t rr Reverse recovery time I F = 1000 A µs Q rr Reverse recovery charge di/dt= 1000 A/µs µC I rr Peak reverse recovery current VR = 1800 V 125 A s Softness (s-factor), min E OFF Turn off energy dissipation J V FR Peak forward recovery di/dt= 400 A/µs 125 38 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 37 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 10 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 11.8 / 13.2 kN Mass 300 g ORDERING INFORMATION : ARF462 S 45 standard specification VRRM/100 500 360 1150 900 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510
ARF462 FAST RECOVERY DIODE TARGET SPECIFICATION giu 00 - ISSUE : 02 Distributed by FORWARD CHARACTERISTIC Tj = 125 °C 200 400 600 800 1000 1200 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 125 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO