ARF360 POSEICO | Alldatasheet
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FAST RECOVERY DIODE ARF360 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 3300 V SNUBBERLESS OPERATION Mean forward current 290 A LOW LOSSES SOFT RECOVERY Surge current 5 kA FINAL SPECIFICATION mar 03 - ISSUE : 4 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 3300 V V RSM Non-repetitive peak reverse voltage 125 3400 V I RRM Repetitive peak reverse current V=VRRM 125 50 mA V DC LINK Permanent DC voltage 125 1500 V CONDUCTING I F (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 290 A I F (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 300 A I FSM Surge forward current Sine wave, 10 ms 125 4.5 kA I² t I² t reapplied reverse voltage up to 50% VRSM 101 x1E3 A²s V FM Forward voltage Forward current = 1200 A 125 6.78 V V F(TO) Threshold voltage 125 1.86 V r F Forward slope resistance 125 4.100 mohm SWITCHING Q rr Reverse recovery charge I F = 500 A di/dt= 100 A/µs 125 µC I rr Peak reverse recovery current VR = 50 V 125 A t rr Reverse recovery time I F = 500 A µs Q rr Reverse recovery charge di/dt= 1000 A/µs µC I rr Peak reverse recovery current VR = 1800 V 125 A s Softness (s-factor), min E OFF Turn off energy dissipation J V FR Peak forward recovery di/dt= 400 A/µs 125 V MOUNTING R th(j-c) Thermal impedance Junction to heatsink, double side cooled 50 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 15 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 8.0 / 9.0 kN Mass 85 g ORDERING INFORMATION : ARF360 S 33 standard specification VRRM/100 226 545 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510
ARF360 FAST RECOVERY DIODE FINAL SPECIFICATION mar 03 - ISSUE : 4 Distributed by FORWARD CHARACTERISTIC Tj = 125 °C 100 200 300 400 500 600 700 800 900 1000 1357 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 125 °C 0.5 1.5 2.5 3.5 4.5 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO