AR670 POSEICO | Alldatasheet
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FINAL SPECIFICATION nov 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE DC 180°120° 90° 60° 30° 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 500 1000 1500 2000 2500 3000 3500 I F(AV) [A] PF(AV) [W] DC 120°90° 60° 30° 100 110 120 130 140 150 0 500 1000 1500 2000 2500 3000 3500 I F(AV) [A] Th [°C] 180° POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
FINAL SPECIFICATION nov 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SINE WAVE 180° 120° 90° 60° 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 500 1000 1500 2000 2500 3000 3500 I F(AV) [A] PF(AV) [W] 30° 180°120°90°60° 30° 110 130 150 170 0 500 1000 1500 2000 2500 3000 3500 I F(AV) [A] Th [°C] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
FINAL SPECIFICATION nov 02 - ISSUE : 03 Distributed by FORWARD CHARACTERISTIC Tj = 150 °C 1000 2000 3000 4000 5000 6000 7000 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 150 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO