AR649 POSEICO | Alldatasheet
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TARGET SPECIFICATION nov 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE DC 180° 60° 30° 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 3000 4000 5000 6000 7000 I F(AV) [A] PF(AV) [W] 90° 120° DC 90° 60° 30° 110 130 150 170 190 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A] Th [°C] 120° 180° POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
TARGET SPECIFICATION nov 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SINE WAVE 180° 120° 90° 60° 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1000 2000 3000 4000 5000 6000 I F(AV) [A] PF(AV) [W] 30° 180° 120° 90°60° 30° 110 130 150 170 190 0 1000 2000 3000 4000 5000 6000 I F(AV) [A] Th [°C] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
TARGET SPECIFICATION nov 02 - ISSUE : 03 Distributed by FORWARD CHARACTERISTIC Tj = 175 °C 2000 4000 6000 8000 10000 12000 14000 0.6 1.1 1.6 2.1 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 175 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvementPOSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO