AR409PC POSEICO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 RECTIFIER DIODE AR409PC Repetitive voltage up to 600 V Mean forward current 3510 A Surge current 30 kA FINAL SPECIFICATION lug 02 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 190 600 V V RSM Non-repetitive peak reverse voltage 190 700 V I RRM Repetitive peak reverse current V=VRRM 190 75 mA CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 3510 A I F (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 3865 A I FSM Surge forward current Sine wave, 10 ms 190 30 kA I² t I² t without reverse voltage 4500 x 1E3 A²s V FM Forward voltage Forward current = 4000 A 190 1.25 V V F(TO) Threshold voltage 190 0.75 V r F Forward slope resistance 190 0.125 mohm SWITCHING t rr Reverse recovery time µs Q rr Reverse recovery charge 190 µC I rr Peak reverse recovery current A MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 21 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 7 °C/kW T j Operating junction temperature -30 / 190 °C F Mounting force 11.8 / 13.2 kN Mass 90 g ORDERING INFORMATION : AR409PC S 06 standard specification VRRM/100 POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

FINAL SPECIFICATION lug 02 - ISSUE : 2 DISSIPATION CHARACTERISTICS SQUARE WAVE DC 180°120° 90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 0 1000 2000 3000 4000 5000 I F(AV) [A] PF(AV) [W] 180°120° 90°60° 30° 110 130 150 170 190 0 1000 2000 3000 4000 5000 I F(AV) [A] Th [°C] DC POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

FINAL SPECIFICATION lug 02 - ISSUE : 2 DISSIPATION CHARACTERISTICS SINE WAVE 180° 120° 90° 60° 30° 1000 2000 3000 4000 5000 6000 7000 0 500 1000 1500 2000 2500 3000 3500 4000 I F(AV) [A] PF(AV) [W] 120° 90° 60°30° 110 130 150 170 190 210 0 500 1000 1500 2000 2500 3000 3500 4000 I F(AV) [A] Th [°C] 180 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

FINAL SPECIFICATION lug 02 - ISSUE : 2 Distributed by FORWARD CHARACTERISTIC Tj = 190 °C 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 190 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. PLASTIC CASE DEVICE POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO