AR371 POSEICO | Alldatasheet
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TARGET SPECIFICATION nov 02 - ISSUE : 02 DISSIPATION CHARACTERISTICS SQUARE WAVE 110 130 150 170 0 200 400 600 800 1000 1200 1400 I F(AV) [A] Th [°C] DC 180° 30° 60° 90° 120° 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 IF(AV) [A] PF(AV) [W] 30° DC 180°120 90° 60° POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
TARGET SPECIFICATION nov 02 - ISSUE : 02 DISSIPATION CHARACTERISTICS SINE WAVE 110 130 150 170 0 200 400 600 800 1000 I F(AV) [A] Th [°C] 180° 30° 60° 90° 120° 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 I F(AV) [A] PF(AV) [W] 30° 180° 120° 90° 60° POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO
TARGET SPECIFICATION nov 02 - ISSUE : 02 Distributed by FORWARD CHARACTERISTIC Tj = 150 °C 500 1000 1500 2000 2500 3000 0.6 1.6 2.6 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 150 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO