AR302 POSEICO | Alldatasheet
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FINAL SPECIFICATION ago 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO DC180°120°90°60° 30° 110 130 150 170 190 0 500 1000 1500 2000 2500 IF(AV) [A] Th [°C] DC 180°120° 90° 60° 30° 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 I F(AV) [A] PF(AV) [W]
FINAL SPECIFICATION ago 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SINE WAVE POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO 180°120°90°60°30° 110 130 150 170 190 210 0 500 1000 1500 2000 2500 I F(AV) [A] Th [°C] 180°120° 90° 60°30° 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 I F(AV) [A] PF(AV) [W]
FINAL SPECIFICATION ago 02 - ISSUE : 03 Distributed by FORWARD CHARACTERISTIC Tj = 190 °C 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.6 1.1 1.6 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 190 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO