AR2004 POSEICO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0 /i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0/i0 RECTIFIER DIODE AR2004 Repetitive voltage up to 2400 V Mean forward current 2525 A Surge current 28 kA FINAL SPECIFICATION nov 02 - ISSUE : 05 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 175 2400 V V RSM Non-repetitive peak reverse voltage 175 2500 V I RRM Repetitive peak reverse current V=VRRM 175 50 mA CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 2525 A I F (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 2485 A I FSM Surge forward current Sine wave, 10 ms 175 28 kA I² t I² t without reverse voltage 3920 x 1E3 A²s V FM Forward voltage Forward current = 3400 A 25 1.30 V V F(TO) Threshold voltage 175 0.80 V r F Forward slope resistance 175 0.165 mohm SWITCHING t rr Reverse recovery time µs Q rr Reverse recovery charge 175 µC I rr Peak reverse recovery current A MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 26 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW T j Operating junction temperature -30 / 175 °C F Mounting force 18.0 / 20.0 kN Mass 500 g ORDERING INFORMATION : AR2004 S 24 standard specification VRRM/100 POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

FINAL SPECIFICATION nov 02 - ISSUE : 05 DISSIPATION CHARACTERISTICS SQUARE WAVE DC180° 120°90° 60° 30° 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 500 1000 1500 2000 2500 3000 3500 4000 I F(AV) [A] PF(AV) [W] DC180° 120° 90°60° 30° 110 130 150 170 190 0 500 1000 1500 2000 2500 3000 3500 4000 I F(AV) [A] Th [°C] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

FINAL SPECIFICATION nov 02 - ISSUE : 05 DISSIPATION CHARACTERISTICS SINE WAVE 180° 120° 90° 60° 30° 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 500 1000 1500 2000 2500 3000 3500 4000 I F(AV) [A] PF(AV) [W] 180° 120° 90° 60° 30° 110 130 150 170 190 0 500 1000 1500 2000 2500 3000 3500 4000 IF(AV) [A] Th [°C] POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO

FINAL SPECIFICATION nov 02 - ISSUE : 05 Distributed by FORWARD CHARACTERISTIC Tj = 175 °C 1000 2000 3000 4000 5000 6000 7000 8000 Forward Voltage [V] Forward Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 175 °C 1 10 100 n° cycles ITSM [kA] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO Spa reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO