APM-7099SM | DigiCamel IC Datasheet

Online Datasheet

Read APM-7099SM online.

APM-7099SM MARKIMICROWAVE | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 13

Technical content

1.1 General Description

The APM-7099SM is a broadband low phase noise driver amplifier designed to provide a saturated +25 dBm output power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to drive our NLTL multiplier line. It can also provide enough power to drive the LO port of an S-diode mixer from 10 MHz to 15 GHz, or of an H or L-diode mixer from 10 MHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low and high - power applications. The APM-7099SM is packaged in a compact 4 mm QFN for surface mount integration on circuit board-based systems.

1.2 Features

▪ -167 dBc/Hz phase noise at 10 kHz offset frequency ▪ +25 dBm output power up to 20GHz ▪ Low DC power consumption ▪ Positive-only biasing ▪ No sequencing required ▪ Unconditionally stable ▪ .s2p S-Parameters: EVAL-APM- 7099SM.s2p

1.3 Applications

▪ Mobile test and measurement equipment ▪ Radar and satellite communications ▪ 5G Transceivers ▪ Driver amplifier for S, H, and L – diode mixers ▪ NLTL Driver ▪ Suitable as a T3 driver

1.4 Functional Block Diagram

1.5 Part Ordering Options1

Number Description Package Green Status Product Lifecycle Export Classification APM-7099SM 4x4 mm Surface Mount QFN RoHS Active EAR99 EVAL-APM- 7099SM Connectorized Evaluation Fixture EVAL RoHS Active EAR99 1 Refer to our website for a list of definitions for terminology presented in this table.

www.markimicrowave.com APM-7099SM Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 2 | R e v . A Table of Contents 2. APM-7099SM Port Configurations and 3.3 Recommended Operating Conditions . 5

3.6 APM-7099SM Typical Performance

3.7 Typical Performance Plots of Marki

MT3H-0113H Driven With APM-7099SM

3.8 Connectorized Module APM-7099PA

4.1 APM-7099SM Application Circuit .. 11

5.1 APM-7099SM Package Outline

Revision History

Revision Code Revision Date Comment - October 2020 Datasheet Initial Release A February 2021 Updated Thermal Specs, Absolute Max Table, and Min Specs

2.1 APM-7099SM Port Diagram

A port diagram of the APM-7099SM is shown below.

2.2 APM-7099SM Port Functions

Port Function Description Equivalent Circuit for Package

5 RF Input

This is the RF input port of the device, and is RF matched to 50 Ω. This port is DC- coupled, and requires a blocking capacitor.

12 Current Mirror

Port 12 is the DC voltage bias pad for the current mirror that controls the collector current supplied to the amplifier. See section 3.6 for performance at different bias conditions.

23 Off-Chip Cap

Port 23 allows the user to attach additional off chip bypass capacitance to provide adequate low frequency AC grounding termination to the input matching network. The value should be at least 100nF.

10 Off-Chip Cap

Port 10 allows the user to attach additional off chip bypass capacitance to provide adequate low frequency AC grounding termination to the input matching network. The value should be at least 100nF. RF Output and Collector Supply Port This is the amplifier’s RF Output and positive VC supply voltage pin. It is RF matched to 50 Ω and is DC coupled. Must have less than 7:1 VSWR when operating. GND Ground IC backside must be connected to a DC/RF ground with high thermal and electrical conductivity.

3.1 Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Parameter Maximum Rating Units Power Supply (Collector) Voltage (VC) 9 V Power Supply (Collector) Current (Ic) 225 mA Bias (Current Mirror) Voltage (VB) 9 V RF Input Power (10 MHz – 3 GHz) +12 dBm RF Input Power (3 GHz – 20 GHz) +15 dBm Output Load VSWR 7:1 - Operating Temperature -40 to +85 ˚C Storage Temperature -65 to +150 ˚C 𝜃𝐽𝑐, Junction to Ambient Thermal Resistance 56 ºC/W Max Junction Temperature for MTTF> 1E6 hours 125 ˚C Max Power Dissipation for MTTF of 1E6 hours at 85˚C Baseplate Temperature 709 mW

3.2 Package Information

ESD Human Body Model (HBM), per MIL-STD-750, Method 1020 TBD Weight EVAL-APM-7099SM 43.6g

3.3 Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Min Nominal Max2 Units TA, Ambient Temperature -40 +25 +85 °C Positive DC Voltage (VC) +5 +8 +9 V Quiescent DC Current (Ic) 38 72 132 mA DC Current with RF Input (Ic) - - 225 mA Positive DC Current Mirror Voltage (VB) +5 +7 +9 V Input Power for Saturation +10 +11 +12 dBm

3.4 Sequencing Requirements

There is no sequencing required to power up or power down the amplifier. Amplifier must have an output load connected when operating. 2 Maximum recommended operating current conditions without RF input applied. Please see typical performance plots on page 9 for relationship between RF input power and DC current draw.

3.5 Electrical Specifications

The electrical specifications apply at TA=+25 °C in a 50 Ω system. QFNs are 100% RF tested. Parameter Test Conditions Frequency Min Typical Units Output P7dB3 8 V/7 V bias 10 MHz – 15 GHz +19 +25 dBm 15 GHz – 20 GHz +23 Small Signal Gain

8 V/7 V

bias, -20 dBm Input Power

10 MHz – 15 GHz +10 +14

15 GHz – 20 GHz +12

Input Return Loss 10 MHz – 20 GHz 8 Output Return Loss 10 MHz – 20 GHz 12 Noise Figure

10 MHz – 20 GHz 6

10 MHz – 20 GHz 28

Collector Current4, Ic 8 V/6 V - 53 mA 8 V/7 V - 72 Current Mirror Current, Ib 8 V/6 V - 3.4 8 V/7 V - 4.2 Input IP3 (IIP3) 8 V/7 V bias, -12 dBm Input Power

10 MHz – 20 GHz +13

Output IP3 (OIP3) 10 MHz – 20 GHz +27 Output P1dB 8 V/7 V bias 10 MHz – 20 GHz +21 Input Power for Saturation 8 V/7 V bias 10 MHz – 20 GHz +12 dBm Phase Noise @ 10 kHz Offset +13 dBm Input power

1 GHz -167 dBc/Hz

3 Saturated output power specification defined using the EVAL-APM-7099SM P7dB compression

curve shown in section 3.6 4 Bias conditions for Ic and Ib tested with no RF input power. See section 3.6 for DC current vs. RF power. Bias conditions presented as VC/VB.

3.6 APM-7099SM Typical Performance Plots5

5 APM-7099SM measurements taken in EVAL-APM-7099SM evaluation board. 0 5 10 15 20 25 30 Frequency (GHz) Output PxdB (dBm) vs. Frequency, 8 V/7 V Bias P1dB P3dB P5dB P7dB 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V 0 5 10 15 20 25 30 Frequency (GHz) Output PxdB (dBm) vs. Frequency, 7 V/7 V Bias P1dB P3dB P5dB P7dB 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 7V Vb = 5V Vb = 6V Vb = 7V 0 5 10 15 20 25 30 Frequency (GHz) Output PxdB (dBm) vs. Frequency, 6 V/6 V Bias P1dB P3dB P5dB P7dB 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 6V Vb = 5V Vb = 6V Vb = 7V -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) Input Return Loss (dB) vs. Frequency, Vc = 8V Vb = 7V Vb = 6V Vb = 5V -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) Output Return Loss (dB) vs. Frequency, Vc = 8V Vb = 7V Vb = 6V Vb = 5V

www.markimicrowave.com APM-7099SM Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 8 | R e v . A -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 Frequency (GHz) Reverse Isolation (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V -30 -20 -10 0 5 10 15 20 25 30Input Frequency (GHz) Harmonic Response (dBm) vs. Input Freq. 8 V/8 V Bias, +11 dBm Input Power Fundamental 2nd Harmonic 3rd Harmonic 4th Harmonic 5th Harmonic 0 5 10 15 20 25 30 Frequency (GHz) Saturated Output Power (dBm) vs. Frequency over Temperature,

8 V/7 V Bias

-40C 0C 25C 65C 85C 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency over Temperature, -40C 0C 25C 65C 85C 0 5 10 15 20 25 30 Frequency (GHz) OIP3 (dBm) vs. Frequency, -12 dBm Input 7V/7V 8V/7V 0 5 10 15 20 25 30 Frequency (GHz) IIP3 (dBm) vs. Frequency, -12dBm Input 7V/7V 8V/7V 0 5 10 15 20 25 Frequency (GHz) Noise Figure (dB) vs. Frequency

3.7 Typical Performance Plots of Marki MT3H-0113H Driven With APM-7099SM

-10 -5 0 5 10 15 RF Input Power (dBm) PAE, Gain, and Output Power vs. RF Input Power, 8 V/7 V, F=5 GHz PAE Pout Gain -10 -5 0 5 10 15 RF Input Power (dBm) PAE, Gain, and Output Power vs. RF Input Power, 8 V/7 V, F=15 GHz PAE Pout Gain 100 120 140 160 180 200 220 240 -15 -10 -5 0 5 10 15 RF Input Power (dBm) Collector Current (mA) vs. RF Input Power, 8 V/7V Bias

1 GHz

5 GHz

10 GHz

15 GHz

20 GHz

2.5 3.5 4.5 5.5 100 5 5.5 6 6.5 7 7.5 8 Vb (V) Ic, Ib (mA) vs. Vb, Vc = 8V Ic Ib 0 2 4 6 8 10 12 14 Frequency (GHz) MT3H-0113H Config. A IIP3 (dBm) vs. Frequency, 1GHz IF, EVAL-APM-7099SM LO Driver, 8 V/7 V Bias 3dBm 6dBm 9dBm 12dBm 0 2 4 6 8 10 12 14 Frequency (GHz) MT3H-0113H Config. A OIP3 (dBm) vs. Frequency, 1GHz IF, EVAL-APM-7099SM LO Driver, 8 V/7 V Bias 3dBm 6dBm 9dBm 12dBm -20 -18 -16 -14 -12 -10 0 2 4 6 8 10 12 14 Frequency (GHz) MT3H-0113H Config. A Conversion Loss (dB) vs. Frequency, 1GHz IF, EVAL-APM-7099SM LO Driver, 8 V/7 V Bias 3dBm 6dBm 9dBm 12dBm

3.8 Connectorized Module APM-7099PA Performance Plots6

3.8.1 Phase Noise Plot

3.8.2 Time Domain Plots7 8

6 Surface mount module APM-7099SM performance can be expected to be similar to

connectorized module performance. 7 Fast rise time is desirable for linear T3 mixer operation.

8 Data taken using APM7099PA module

-180 -175 -170 -165 -160 -155 -150 -145 -140 -135 -130 10 100 1,000 10,000 100,000 1,000,000 Offset Frequency (Hz) Residual Phase Noise (dBc/Hz) vs. Offset Frequency F = 1 GHz, +13 dBm Input 0 500 1000 1500 2000 Time (ps) Output Voltage (V) vs. Time, F = 1 GHz, 8V/7V, +11 dBm Input 0 100 200 300 400 Time (ps) Output Voltage (V) vs. Time, F = 5 GHz, 8V/7V, +12 dBm Input 0 50 100 150 200 250 300 350 400 Time (ps) Output Voltage (V) vs. Time, F = 10 GHz, 8V/7V, +12 dBm Input

4.1 APM-7099SM Application Circuit

Below is the recommended application circuit for the APM-7099SM. RF input and output should be soldered to 50 Ω traces. A suggested capacitor for the bypass capacitors would be 0402 0.1 uF 16 V surface mount capacitors, such as the AVX 0402YD104KAT2A. For the input blocking capacitor, the suggested capacitor would be a 0402 4.7 nF 16V surface mount capacitor, such as the AVX 0402YD472KAT2A.

4.2 Bypass Capacitors

The bypass capacitors on ports CAP1 and CAP2 provide AC ground to the internal circuits on the chip. These should not be DC coupled to prevent disruption of the internal biasing circuits, or outright damage to the chip. The value of these be at least 100nF to provide adequate AC grounding. An additional 100 nF bypass capacitor should be added to the VC line to stabilize the amplifier and prevent power supply feedback to other parts on the board.

4.3 Evaluation Board Header Pinout

On the EVAL-APM-7099SM, there is a header for biasing the VB port. Only one pin is connected to VB, all other pins are soldered directly to the top side ground plane.

4.4 Harmonic Generation

The APM-7099’s harmonic generation can be controlled by adjusting the supply and bias voltages. Decreasing the base voltage VB will increase the even harmonic generation and odd harmonic suppression. To increase the odd harmonic generation and even harmonic suppression, decrease

www.markimicrowave.com APM-7099SM Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 12 | R e v . A the collector voltage VC. The optimal bias condition for even harmonic generation is VC = 8 V and VB = 5 V, while the optimal bias condition for odd harmonic generation is VC = 5 V and VB = 8 V. 5. Mechanical Data

5.1 APM-7099SM Package Outline Drawing

Notes: 1. Substrate Material is Plastic. 3. All unconnected pins should be connected to PCB RF ground.

5.2 APM-7099SM Landing Pattern

5.3 EVAL-APM-7099SM Outline

Product Information

APM-7099SM specifications and overview.

Summary

0.01-20 GHz Surface Mount Low Phase Noise Amplifier

Description

0.01-20 GHz Surface Mount Low Phase Noise Amplifier

Source title APM-7099SM Datasheet(PDF) - Marki Microwave

Related Parts

More parts from the same family.

Browse manufacturer