APM-7099 MARKIMICROWAVE | Alldatasheet
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Technical content
0.01GHz – 20 GHz Low Phase Noise Amplifier APM-7099 Copyright © [2021] Marki Microwave, Inc. All Rights Reserved P a g e 1 | R e v . A 1. Device Overview
1.1 General Description
The APM-7099 is a broadband distributed, low phase noise driver amplifier designed to provide a saturated +25 dBm output power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to drive our NLTL multiplier line. It can also provides sufficient power to drive the LO port of an S-diode mixer from 10 MHz to 15 GHz or of an H or L diode mixer from 10 MHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
1.2 Features
▪ -167 dBc/Hz phase noise at 10 kHz offset frequency ▪ +25 dBm output power ▪ Low DC power consumption ▪ Positive-only biasing ▪ No sequencing required ▪ Unconditionally stable ▪ .s2p S-Parameters: APM- 7099CH.s2p
1.3 Applications
▪ Mobile test and measurement equipment ▪ Radar and satellite communications ▪ 5G Transceivers ▪ Driver amplifier for S, H, and L – diode mixers ▪ NLTL Driver ▪ Suitable as a T3 driver
1.4 Functional Block Diagram
1.5 Part Ordering Options1
Number Description Package Green Status Product Lifecycle Export Classification APM-7099CH Wire Bondable Die Bare Die RoHS Active EAR99 APM-7099PA Connectorized Module PA RoHS Active EAR99 1 Refer to our website for a list of definitions for terminology presented in this table. RF Input RF Output +VC +VB PA Module Bare Die
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3.6 APM-7099CH Typical Performance
3.7 APM-7099PA Typical Performance
3.8 Typical Performance Plots of Marki
MT3H-0113H with APM-7099PA LO 4.1 APM-7099CH Application Circuit ... 14
5.2 APM-7099PA Package Outline
Revision History
Revision Code Revision Date Comment - October 2020 Datasheet Initial Release A March 2021 Updated maximum input power and min specs
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2.1 APM-7099CH Port Diagram
A port diagram of the APM-7099CH is shown below. RF In RF Out/ VC VBCAP2 CAP1
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2.2 APM-7099CH Port Functions
Port Function Description Equivalent Circuit for Package RF In RF Input This is the RF Input port of the amplifier die. It is RF matched to 50 Ω, and is DC coupled. RF input pad is GSG with 175 µm pitch. VB Current Mirror Bias Port Port VB is the DC voltage bias pad for the current mirror that control the collector current supplied to the amplifier. Larger voltages result in a higher current draw through port RF Out/VC, effectively functioning as a gain control pin of the amplifier. See section 3.6 for performance at different bias conditions. CAP1 Off-Chip Cap Port 1 CAP1 is a pad that allows the user to attach additional off chip bypass capacitance to the VC supply line. A 0.1µF capacitor is recommended CAP2 Off-Chip Cap Port 2 CAP2 is a pad that allows the user to attach additional off chip bypass capacitance to provide adequate AC grounding termination. A 0.1 µF capacitor is recommended RF Out/VC RF Output and Collector Supply Port This is the amplifier die’s RF Output and positive VC supply voltage port. It is RF matched to 50 Ω and is DC coupled. RF output pad is GSG with 175 µm pitch. Must have less than 7:1 VSWR when operating with voltage larger 8V on VC GND Ground Backside of the IC must be connected to a DC/RF ground with high thermal and electrical conductivity. RF In VB CAP1 CAP2 RF Out/VC
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2.3 APM-7099PA Port Diagram
A port diagram of the APM-7099PA is shown below.
2.4 APM-7099PA Port Functions
Port Function Description Equivalent Circuit for Package RF In RF Input This is the RF Input port of the amplifier die. It is RF matched to 50 Ω, and has built-in DC blocking capacitors. VC Collector DC Supply Port Port VC is the DC voltage supply for that supplies the amplifier’s collector current. It is connected internally through the amplifier die’s RF output port. VB Base Current Mirror Bias Port Port VB is the DC voltage bias for the current mirror that controls collector current supplied to the amplifier. Larger voltages result in a higher current draw through port VC, effectively functioning as a gain control pin of the amplifier. See section 3.6 for performance at different bias conditions. RF Out RF Output This is the amplifier’s RF Output. It is RF matched to 50 Ω and has built-in DC blocking capacitors. Must have less than 7:1 VSWR when operating with voltage larger 8V on VC GND Ground Housing or outside of the coaxial cables must be connected to a DC/RF ground potential with high thermal and electrical conductivity. RF In RF Out +VC +VB GND RF In VC VB RF Out
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3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Parameter Maximum Rating Units Collector Positive Bias Voltage (VC) 9 V Positive Bias Current (Ic) 225 mA Positive DC Current Mirror Voltage (VB) 9 V RF Input Power (10 MHz – 3GHz) +12 dBm RF Input Power (3 GHz – 20 GHz) +15 dBm Output Load VSWR 7:1 - Operating Temperature -40 to +85 ˚C Storage Temperature -65 to +150 ˚C 𝜃𝐽𝐶, Junction to Ambient Thermal Resistance 56 ºC/W Max Junction Temperature for MTTF > 1E6 hours 125 ˚C Max Power Dissipation for MTTF of 1E6 hours at 85˚C Baseplate Temperature 709 mW
3.2 Package Information
ESD Human Body Model (HBM), per MIL-STD-750, Method 1020 TBD Weight APM-7099PA 15.0g
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3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Recommended Operating Conditions – CH bare die package2 Min Nominal Max Units TA, Ambient Temperature -40 +25 +85 °C Power Supply DC Voltage (VC) +5 +8 +9 V Power Supply DC Current (Ic) (No RF Input)2, 3 38 72 132 mA Power Supply DC Current (with RF Input)4 - - 180 mA Recommended Operating Conditions – PA connectorized module package5 Min Nominal Max Units TA, Ambient Temperature -40 +25 +40 °C Power Supply DC Voltage (VC) +5 +8 +9 V Power Supply DC Current (Ic) (No RF Input)2, 3 38 72 132 mA Power Supply DC Current (with RF Input)4 - - 225 mA Bias Voltage (VB) +5 +7 +9 V Input Power for Saturation +10 +11 +12 dBm
3.4 Sequencing Requirements
There is no sequencing required to power up or power down the amplifier. Amplifier must have an output load connected during operation.
2 Ic should be modified by changing bias voltage VB to maintain junction temperature within MTTF
target for given operating conditions. 3 Recommended operating current conditions without RF input applied. Please see typical performance plots on page 12 for relationship between RF input power and DC current draw. 4 Operation above recommended max power supply DC current will result in reduced MTTF. 5 Module conditions provided for laboratory conditions. For use in test systems with extended lifetimes bare die operating conditions should be followed.
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3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis Parameter Test Conditions Frequency Min Typical Units Saturated Output Power6 8V/7V bias 10 MHz – 15 GHz 19 25 dBm 15 GHz – 20 GHz 23 Small Signal Gain 8V/7V bias, -15 dBm Input Power
10 MHz – 15 GHz 10 14
15 GHz – 20 GHz 12
Input Return Loss 10 MHz – 20 GHz 14 Output Return Loss 10 MHz – 20 GHz 20 Reverse Isolation 10 MHz – 20 GHz 36 Noise Figure -30 dBm Input Power 10 MHz – 20 GHz 5 Collector Current7, Ic 8V/6V - mA 8V/7V - 72 8V/8V - 96 Current Mirror Current, Ib 8V/6V - 3.4 8V/7V - 4.2 8V/8V - 5 Input IP3 (IIP3) 8V/7V bias, -15 dBm Input Power
10 MHz – 20 GHz 12
Output IP3 (OIP3) 10 MHz – 20 GHz 24 Output P1dB 8V/7V bias 10 MHz – 20 GHz 23 Input Power for Saturation 8V/7V bias 10 MHz – 20 GHz +12 dBm Phase Noise @ 10 kHz Offset +12 dBm Input power 1 GHz -167 dBc/Hz
6 Saturated Output Power specification defined using the APM-7099PA P3dB compression curve
shown in section 3.7. 7 Bias conditions for Ic and Ib tested with no RF input power. See section 3.7 for DC current vs. RF power. Bias conditions presented as VC/VB.
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3.6 APM-7099CH Typical Performance Plots
Frequency (GHz) Small Signal Gain(dB) vs. Frequency, Vc = 8V Vb = 5V, Ic = 38mA Vb = 6V, Ic = 54mA Vb = 7V, Ic = 73mA 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 7V Vb = 5V, Ic = 38mA Vb = 6V, Ic = 53mA Vb = 7V, Ic = 72mA 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 6V Vb = 5V, Ic = 37mA Vb = 6V, Ic = 53mA Vb = 7V, Ic = 71mA 1 10 100 1,000 Frequency (MHz) Small Signal Gain (dB) vs. Frequency, 8V/7V Bias -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) Output Return Loss (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) Input Return Loss (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 Title Reverse Isolation (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V
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3.7 APM-7099PA Typical Performance Plots
Frequency (GHz) Output Comp. Points (dBm) vs. Frequency, 8V/7V OP1dB OP3dB 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 8V Vb = 5V, Ic = 38 mA Vb = 6V, Ic = 54 mA Vb = 7V, Ic = 73 mA 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 7V Vb = 5V, Ic = 38 mA Vb = 6V, Ic = 53 mA Vb = 7V, Ic = 72 mA 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vc = 6V Vb = 5V, Ic = 38 mA Vb = 6V, Ic = 53 mA Vb = 7V, Ic = 72 mA -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) Input Return Loss (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V Vb = 8V -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) Output Return Loss (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V Vb = 8V -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 Frequency (GHz) Reverse Isolation (dB) vs. Frequency, Vc = 8V Vb = 5V Vb = 6V Vb = 7V -180 -175 -170 -165 -160 -155 -150 -145 -140 -135 -130 10 100 1,000 10,000 100,000 1,000,000 Offset Frequency (Hz) Residual Phase Noise (dBc/Hz) vs. Offset Frequency F = 1 GHz, +13 dBm Input
www.markimicrowave.com APM-7099 Copyright © [2021] Marki Microwave, Inc. All Rights Reserved P a g e 11 | R e v . A 0 5 10 15 20 25 30 Frequency (GHz) Saturated Output Power (dBm) vs. Frequency, Over Temperature, 8V/7V -40C 0C 25C 65C 85C 0 5 10 15 20 25 Frequency (GHz) Noise Figure (dB) vs. Frequency 0 5 10 15 20 25 30 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Over Temperature, 8V/7V -40C 0C 25C 65C 85C -20 -15 -10 0 5 10 15 20 25 30 Input Frequency (GHz) Harmonic Response (dBm) vs. Input Frequency, +10 dBm input, 8V/7V Fundamental 0 5 10 15 20 25 30 Frequency (GHz) OIP3 (dBm) vs. Frequency, -15 dBm Input 8V/7V 7V/7V 6V/6V 0 5 10 15 20 25 30 Frequency (GHz) IIP3 (dBm) vs. Frequency, -15 dBm Input 8V/7V 7V/7V 6V/6V -15 -10 -5 0 5 10 15 RF Input Power (dBm) PAE, Gain, and Output Power vs. RF Input Power, 8V/7V F = 5 GHz PAE (%) Gain (dB) Output Power (dBm) -15 -10 -5 0 5 10 15 RF Input Power (dBm) PAE, Gain, and Output Power vs. RF Input Power, 8V/7V, F = 15 GHz PAE (%) Gain (dB) Output Power (dBm)
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3.8 Typical Performance Plots of Marki MT3H-0113H with APM-7099PA LO
8 Operation above Max Ic Limit = 180mA, will result in reduced MTTF
9 LO Input Powers specified as the input power into the APM-7099PA LO driver
-20 -15 -10 -5 0 5 10 15 RF Input Power (dBm) Ic (mA) vs. RF Input Power, 8V/7V8
1 GHz 5 GHz
10 GHz 15 GHz
20 GHz Max Ic
2.5 3.5 4.5 5.5 100 5 5.5 6 6.5 7 7.5 8 IbIc Vb (V) Ic, Ib (mA) vs. Vb, Vc = 8V Ic Ib 1 2 3 4 5 6 7 8 9 10 11 12 13 RF Frequency (GHz) MT3H-0113H Config. A IIP3 (dBm) vs. Frequency, 1 GHz IF, APM-7099PA LO Driver, 8V/7V Bias +3 dBm LO Input +6 dBm LO Input +9 dBm LO Input +12 dBm LO Input -20 -18 -16 -14 -12 -10 1 2 3 4 5 6 7 8 9 10 11 12 13 RF Frequency (GHz) MT3H-0113H Config. A Conv. Loss (dB) vs. Frequency, 1 GHz IF, APM-7099PA LO Driver, 8V/7V Bias +3 dBm LO Input +6 dBm LO Input +9 dBm LO Input +12 dBm LO Input 1 2 3 4 5 6 7 8 9 10 11 12 13 RF Frequency (GHz) MT3H-0113H Config. A OIP3 (dBm) vs. Frequency, 1 GHz IF, APM-7099PA LO Driver, 8V/7V Bias +3 dBm LO Input +6 dBm LO Input +9 dBm LO Input +12 dBm LO Input
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3.9 Time Domain Plots10
3.10 Harmonic Generation
The APM-7099’s harmonic generation can be controlled by adjusting the supply and bias voltages. Decreasing the base voltage VB will increase the even harmonic generation and odd harmonic suppression. To increase the odd harmonic generation and even harmonic suppression, decrease the collector voltage VC. The optimal bias condition for even harmonic generation is VC = 8V and VB = 5V, while the optimal bias condition for odd harmonic generation is VC = 5V and VB = 8V. 10 Fast rise time is desirable for linear T3 mixer operation. 0 500 1000 1500 2000 Time (ps) Output Voltage (V) vs. Time, F = 1 GHz, 8V/7V, +11 dBm Input 0 50 100 150 200 250 300 350 400 Time (ps) Output Voltage (V) vs. Time, F = 5 GHz, 8V/7V, +12 dBm Input 0 50 100 150 200 250 300 350 400 Time (ps) Output Voltage (V) vs. Time, F = 10 GHz, 8V/7V, +12 dBm Input
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4.1 APM-7099CH Application Circuit
Below is the recommended application circuit for the APM-7099CH. Designator Description Sample Part Number A Presidio 0.1 µF + 1800 pF Capacitor MVB4080X104ZGH5R3 B Tecdia 0.030”x0.030” 150 pF Capacitor CMS151Z2NC-CK C* 0402 4.7 nF SMT Capacitor CL05B472KB5NNNC D 0402 1.0 µF SMT Capacitor CL05A105KO5NNNC E 0402 20𝛀 SMT Resistor CPF0402B20RE1 F Marki Surface-Mount Bias Tee; 5 MHz – 34 GHz BT-0034SMG Note*: If the user intends to operate the APM-7099CH at less than 10 MHz input frequency, then the input DC blocking capacitor value must be no greater 4.7nF to avoid catastrophic damage. RF In RF Out/ VC VBCAP2 CAP1 RF In A 50Ω trace 50Ω RF Out 50Ω trace 50Ω B VB F VC A 20 Ω C D E D 4.7 n
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