AP9U18GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 20V ▼ Low On-resistance RDS(ON) 14mΩ ▼ Low Gate Voltage Drive ID 37A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 5.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Thermal Data Storage Temperature Range Total Power Dissipation 25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.2 Continuous Drain Current, VGS @ 10V 24 Pulsed Drain Current1 140 Gate-Source Voltage ±12 Continuous Drain Current, VGS @ 10V 37 Parameter Rating Drain-Source Voltage 20 200831071-1/4 AP9U18GH RoHS-compliant Product G D S TO-252(H) G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=18A - - 14 mΩ VGS=2.5V, ID=9A - - 28 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.5 V gfs Forward Transconductance V DS=5V, ID=18A - 18 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS= ±12V - - ±100 nA Qg Total Gate Charge2 ID=18A - 21 34 nC Qgs Gate-Source Charge V DS=16V - 2.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=10V - 8.3 - ns tr Rise Time I D=18A - 102 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 24 - ns tf Fall Time R D=0.56Ω -1 2- ns Ciss Input Capacitance V GS=0V - 1280 2050 pF Coss Output Capacitance V DS=20V - 175 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=18A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 17 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP9U18GH THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 5.0V 4.5V 3.5V 2.5V V G = 2 .0V 100 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 5.0V 4.5V 3.5V 2.5V V G = 2 .0V 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.6 1.2 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) (V) 02468 1 0 VGS , Gate-to-Source Voltage (V) RDS(ON) (m I D =9A T C =25 ℃

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9U18GH 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 6V I D =1 8A 100 1000 10000 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 9U18GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement