AP50GT60SW-HF_14 A-POWER | Alldatasheet

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▼ High Speed Switching IC ▼ Low Saturation Voltage VCE(sat),Typ.=1.85V@IC=45A ▼ Built-in Fast Recovery Diode Absolute Maximum Ratings , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Symbol Rthj-c Rthj-c(Diode) Rthj-a Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- + 100 nA ICES -- 1 m A VCE(sat) - 1.85 2.4 V VGE(th) 2.5 - 7.5 V Qg - 118 188 nC Qge -3 0- nC Qgc -6 4- nC td(on) -6 0- ns tr -5 0- ns td(off) - 140 - ns tf - 180 360 ns Eon - 0.8 - mJ Eoff - 1.4 - mJ Cies - 3200 5120 pF Coes - 240 - pF Cres -7 5- pF VF - 1.5 2 V VF - 1.8 2.4 V trr -4 5- ns Qrr -7 5- nC Data and specifications subject to change without notice FRD Forward Voltage IF=30A Turn-On Switching Loss Turn-Off Switching Loss VCE=300V, Ic=45A, VGE=15V, RG=5Ω, Inductive Load VGE=0V Reverse Transfer Capacitance Rise Time Fall Time Turn-off Delay Time FRD Reverse Recovery Time IF=20A FRD Reverse Recovery Charge di/dt = 100 A/us AP50GT60SW-HF Symbol VCES 600V 45A Rating Collector-Emitter Voltage Units ▼ RoHS Compliant & Halogen-Free V600 Parameter A V 180 A +30 A -55 to 150 150 Storage Temperature Range IF@TC=100oC Diode Forward Current VGE IC@TC=25oC Collector Current Gate-Emitter Voltage A oC/W oC W oC/W Collector-Emitter Leakage Current Gate Threshold Voltage Units oC/W VGE=15V, IC=45A VGE=+30V, VCE=0V Value 0.5 Parameter 1.2Thermal Resistance Junction-Case Halogen-Free Product Maximum Power Dissipation Test Conditions Thermal Resistance Junction-Case 300 Thermal Resistance Junction-Ambient ICM 250 Parameter Pulsed Collector Current Output Capacitance f=1.0MHz oC Turn-on Delay Time Total Gate Charge Gate-to-Emitter Leakage Current Collector-Emitter Saturation Voltage 201211212 oC VCE=400V Gate-Collector Charge IC=45A VCE=600V, VGE=0V VGE=15V VCE=VGE, IC=250uA IC@TC=100oC Collector Current 45 Maximum Lead Temp. for Soldering Purposes PD@TC=25oC TJ TSTG Operating Junction Temperature Range TL Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) FRD Forward Voltage IF=15A Gate-Emitter Charge Input Capacitance VCE=30V G C E TO-3P C G C E

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Saturation Voltage Fig 4. Typical Collector- Emitter Voltage Characteristics v.s. Junction Temperature Fig 5. Gate Charge Characterisitics Fi g 6. Typical Capacitance Characterisitics 100 150 200 250 300 01 0 2 0 3 0 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 20V 18V 15V 12V V GE =10V T C =25 o C 0 40 80 120 160 Junction Temperature ( o C) VCE(sat) ,Saturation Voltage(V) I C =5 0A I C =33A V GE =1 5V 0 40 80 120 160 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) 100 012345 V CE , Collector-Emitter Voltage (V) IC , Collector Current(A) V GE =15V T C =25 o C 1000 2000 3000 4000 5000 1 5 9 1 31 72 12 52 93 3 V CE , Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz C ies C oes C res T C =150 o C 100 120 0 4 8 12 16 20 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) T C =150 o C I C =45A V CC =400V 20V 18V 15V 12V V GE =10V

Fig 7. Power Dissipation vs. Junction Fig 8. Effective Transient Thermal Temperature Impedance, Junction-to-Case (IGBT) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE Fig 11. Forward Characteristic of Fig 12. SOA Characteristics Diode 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =5 0A 33 A 15 A T C =25 o C 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =5 0A 33 A 15 A T C = 150o C 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse V F , Forward Voltage (V) IF , Forward Current (A) T j =25 o CT j =150 o C 100 200 300 0 50 100 150 200 Junction Temperature ( o C ) Power Dissipation (W) 0.01 0.1 100 1000 1 10 100 1000 10000 V CE ,Collector - Emitter Voltage(V) IC ,Collctor Current(A) T C =25 o C Single Pulse 10us 100us 1ms 10ms