AP02N60H A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 600V ▼ Repetitive Avalanche Rated RDS(ON) 8Ω ▼ Fast Switching ID 1.6A ▼ Simple Drive Requirement ▼ RoHS Compliant

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 3.2 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice 200705051-1/4 AP02N60H/J -55 to 150 Parameter 1.6 ±30 1.6 Parameter Rating 600 Pb Free Plating Product Storage Temperature Range -55 to 150 Linear Derating Factor 0.31 0.5 The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 600 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=1A - - 8 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=1A - 0.2 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±100 nA Qg Total Gate Charge3 ID=1.6A - 14 20 nC Qgs Gate-Source Charge V DS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8.5 - nC td(on) Turn-on Delay Time3 VDD=300V - 9.5 - ns tr Rise Time I D=1.6A - 12 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 21 - ns tf Fall Time R D=150Ω -9- ns Ciss Input Capacitance V GS=0V - 155 240 pF Coss Output Capacitance V DS=25V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=1.6A, VGS=0V - - 1.5 V trr Reverse Recovery Time IS=1.6A, VGS=0V, - 360 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1970 - nC Notes: 1.Pulse width limited by safe operating area. 2.Starting T j=25oC , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. AP02N60H/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =1A V G =10V 0.5 1.5 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 6.0V 5.5V 5.0V V G = 4.5 V 0.3 0.6 0.9 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 6.0V 5.5V 5.0V V G = 4.5 V 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP02N60H/J td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1.6A V DS =320V V DS =400V V DS =480V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 1000 10000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 1ms 10ms 100ms DC