AP50WN1K5P A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 1.55Ω ▼ Fast Switching Characteristic ID 3 5A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V3 A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation5 W EAS Single Pulse Avalanche Energy4 mJ TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a 62 ℃/W Data & specifications subject to change without notice 1 201612011 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient 12.5 Parameter Rating 500 +30 Halogen-Free Product G D S AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and lo w package cost contribute to the worldwide popular package. G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 500 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2.5A - - 1.55 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 5.8 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 1 uA Qg Total Gate Charge I D=2A - 16 25.6 nC Qgs Gate-Source Charge V DS=400V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 6.5 - nC td(on) Turn-on Delay Time V DD=250V - 11 - ns tr Rise Time I D=2A - 17 - ns td(off) Turn-off Delay Time R G=50Ω -9 2- ns tf Fall Time V GS=10V - 30 - ns Ciss Input Capacitance V GS=0V - 500 800 pF Coss Output Capacitance V DS=100V - 34 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 11 - pF Rg Gate Resistance f=1.0MHz - 3 6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=2A, VGS=0V - 200 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 580 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω 3.Ensure that the junction temperature does not exceed TJmax.. AP50WN1K5P

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =2A V G =10V 0 1 02 03 04 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 6.0V 5.0V V G =4.0V 0 1 02 03 04 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V 6.0V 5.0V V G =4.0V V SD (V) IS (A) T j = 150 o CT j = 25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 1.2 1.4 1.6 1.8 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (Ω) I D =2A T C =25 o C

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Normalized BV DSS v.s. Junction Temperature 200 400 600 800 0 100 200 300 400 500 600 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =400V 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC 0 50 100 150 T C , Case Temperature ( o C ) PD , Power Dissipation (W) Operation in this area limited by RDS(ON) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence