AP9T18GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS 20V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 14mΩ ▼ ▼ ▼ ▼ Surface mount package ID 38A ▼▼▼▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200908052-1/4 AP9T18GH/J Pb Free Plating Product Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage ±16 Continuous Drain Current, V GS @ 4.5V 38 Continuous Drain Current, VGS @ 4.5V 24 Pulsed Drain Current1 140 Total Power Dissipation 31.3 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=4.5V, ID=18A - - 14 mΩ VGS=2.5V, ID=9A - - 28 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.5 V gfs Forward Transconductance V DS=5V, ID=18A - 33 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=16V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±16V - - ±100 nA Qg Total Gate Charge2 ID=18A - 16 25 nC Qgs Gate-Source Charge V DS=16V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=10V - 12 - ns tr Rise Time I D=18A - 80 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 22 - ns tf Fall Time R D=0.56Ω -1 2- ns Ciss Input Capacitance V GS=0V - 1115 1790 pF Coss Output Capacitance V DS=20V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 220 - pF Rg Gate Resistance f=1.0MHz - 1.54 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=18A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=18A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9T18GH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =4.5V 0.5 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 100 120 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 5.0V 4.5V 3.5V 2.5V V G =1.5V 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 5.0V 4.5V 3.5V 2.5V V G =1.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =9A T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9T18GH/J 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =10V V DS =12V V DS =16V td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC