AP9T16AGH-HF_14 A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 20mΩ ▼ Fast Switching Characteristic ID 19.5A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W Rthj-a 62.5 ℃/W Data and specifications subject to change without notice 201110071 Halogen-Free Product -55 to 150 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Total Power Dissipation3 2 Drain-Source Voltage 20 AP9T16AGH-HF Parameter Rating Gate-Source Voltage + 12 Continuous Drain Current, VGS @ 4.5V 19.5 Continuous Drain Current, VGS @ 4.5V 12.3 Pulsed Drain Current1 80 Total Power Dissipation 12.5 Parameter Storage Temperature Range Operating Junction Temperature Range -55 to 150 Thermal Data G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=12A - - 20 m Ω VGS=2.5V, ID=10A - - 30 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance V DS=5V, ID=12A - 29 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=12A - 16 25.6 nC Qgs Gate-Source Charge V DS=16V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time V DS=10V - 10 - ns tr Rise Time I D=12A - 50 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 4- ns tf Fall Time V GS=5V - 8 - ns Ciss Input Capacitance V GS=0V - 1300 2080 pF Coss Output Capacitance V DS=20V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz 0.65 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=12A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9T16AGH-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 5.0V 4.5V 3.5V 2.5V V G =2.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =12A V G =4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.6 1.2 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 100 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 5.0V 4.5V 3.5V 2.5V V G =2.0V I D =250uA 02468 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =10A T C =25 ℃

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 400 800 1200 1600 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 2A V DS =16V 0.1 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V Operation in this area limited by RDS(ON) C iss C oss C rss T j =-40 o C 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A)