AP9T15GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS 20V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 50mΩ ▼ ▼ ▼ ▼ Single Drive Requirement ID 12.5A ▼▼▼▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 10 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Thermal Data Parameter 200908052-1/4 Pulsed Drain Current1 60 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.1 Storage Temperature Range Total Power Dissipation 12.5 -55 to 150 Continuous Drain Current, VGS @ 4.5V 12.5 Continuous Drain Current, VGS @ 4.5V 8 Drain-Source Voltage 20 Gate-Source Voltage ±16 AP9T15GH/J Parameter Rating Pb Free Plating Product The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=4.5V, ID=6A - - 50 mΩ VGS=2.5V, ID=5.2A - - 80 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.5 V gfs Forward Transconductance V DS=5V, ID=10A - 10 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=16V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±16V - - ±100 nA Qg Total Gate Charge2 ID=10A - 5 8 nC Qgs Gate-Source Charge V DS=16V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2 - nC td(on) Turn-on Delay Time2 VDS=10V - 8 - ns tr Rise Time I D=10A - 55 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 10 - ns tf Fall Time R D=1Ω -3- ns Ciss Input Capacitance V GS=0V - 360 580 pF Coss Output Capacitance V DS=20V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.67 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9T15GH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G =4.5V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 5.0V 4.5V 3.5V 2.5V V G =1.5V T C =25 o C 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 5.0V 4.5V 3.5V 2.5V V G =1.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D = 5.2 A T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9T15GH/J 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10A V DS =10V V DS =12V V DS =16V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC