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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive BVDSS 20V ▼ Lower on-resistance RDS(ON) 16mΩ ▼ Surface Mount Package ID 7.5A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Data and specifications subject to change without notice Gate-Source Voltage + 8 Continuous Drain Current3 7.5 Parameter Rating Drain-Source Voltage 20 Continuous Drain Current3 6 Pulsed Drain Current1 40 Total Power Dissipation 1.38 Storage Temperature Range -55 to 150 201211302 AP9938GEY-HF Halogen-Free Product Operating Junction Temperature Range -55 to 150 Thermal Data Parameter 2928-8 D1/D2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - 12.6 16 m Ω VGS=2.5V, ID=4A - 14.9 22 m Ω VGS=1.8V, ID=2A - 18.5 26 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1 V gfs Forward Transconductance V DS=5V, ID=6A - 28 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=6A - 16 26 nC Qgs Gate-Source Charge V DS=10V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time V DS=10V - 7.5 - ns tr Rise Time I D=1A - 14 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 1- ns tf Fall Time V GS=5V - 6 - ns Ciss Input Capacitance V GS=0V - 1075 1720 pF Coss Output Capacitance V DS=10V - 133 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.1A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=6A, VGS=0V, - 11 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9938GEY-HF 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 210 oC/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 5.0V 4.5V 3.5V 2.5V V G =2.0V T A =25 o C 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 5.0V 4.5V 3.5V 2.5V V G =2.0V 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G =4.5V 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 0 4 8 12 16 20 24 28 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =10V 200 400 600 800 1000 1200 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=210oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -40 o C