AP9930M

AP9930M A-POWER | Alldatasheet

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2N AND 2P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS 30V ▼ Low On-resistance RDS(ON) 33mΩ ▼ Full Bridge Application on ID 6.3A LCD Monitor Inverter P-CH BVDSS -30V RDS(ON) 55mΩ

Description

-5.1A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ± 25 ±25 V ID@TA=25℃ Continuous Drain Current3 6.3 -5.1 A ID@TA=70℃ Continuous Drain Current3 4.2 -3.4 A IDM Pulsed Drain Current1 -20 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient3 Max. 62.5 ℃/W Data and specifications subject to change without notice Parameter 200612032 AP9930M Thermal Data The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N1G N1D/P1D N1S/N2S N2G P1G P1S/P2S N2D/P2D P2G SO-8 N1G N1S P1G P1S P1N1D N2G N2S P2G P2S P2N2D

Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.037 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A mΩ VGS=4.5V, ID=3A mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V gfs Forward Transconductance VDS=10V, ID=5A 5.2 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V uA IGSS Gate-Source Leakage VGS=±25V nA Qg Total Gate Charge2 ID=5A 7.1 nC Qgs Gate-Source Charge VDS=15V 2.3 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V 3.8 nC td(on) Turn-on Delay Time2 VDS=15V 7.2 ns tr Rise Time ID=1A 10.4 ns td(off) Turn-off Delay Time RG=6Ω,VGS=10V ns tf Fall Time RD=15Ω 7.8 ns Ciss Input Capacitance VGS=0V 600 pF Coss Output Capacitance VDS=25V 230 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V 1.2 V trr Reverse Recovery Time IS=1.7A, VGS=0V 21.4 ns Qrr Reverse Recovery Charge dI/dt=100A/µs nC AP9930M ±100

Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA -30 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA -0.037 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A mΩ VGS=-4.5V, ID=-3A 100 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA V gfs Forward Transconductance VDS=-10V, ID=-5A 4.8 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V -25 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge2 ID=-5A 7.3 nC Qgs Gate-Source Charge VDS=-15V 2.5 nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V 3.8 nC td(on) Turn-on Delay Time2 VDS=-15V 10.8 ns tr Rise Time ID=-1A 7.6 ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V 19.6 ns tf Fall Time RD=15Ω 17.5 ns Ciss Input Capacitance VGS=0V 486 pF Coss Output Capacitance VDS=-25V 185.5 pF Crss Reverse Transfer Capacitance f=1.0MHz 133.8 pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V -1.2 V trr Reverse Recovery Time IS=-1.7A, VGS=0V ns Qrr Reverse Recovery Charge dI/dt=-100A/µs nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. ± 25V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP9930M V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 oC 10V 4.0V 8.0V 6.0V V G =3.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 oC 4.0V 6.0V 8.0V 10V V G =3.0V V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ Ω Ω I D =5A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( oC) Normalized RDS(ON) V G =10V I D =5A 1.2 1.4 1.6 1.8 -50 100 150 T j ,Junction Temperature ( oC) VGS(th) (V) 0.01 0.10 1.00 10.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 oC T j =150 oC

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 100 0.1 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 oC Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃ ℃/W 0.02 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4.5A V DS =15V 100 1000 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP9930M 0.6 0.8 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G = -10V I D =-5A -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -8.0V -6.0V -4.0V V G =-3.0V -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -4.0V -6.0V -8.0V V G =-3.0V 100 -V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ Ω Ω I D =-5A T A =25 ℃ 0.01 0.10 1.00 10.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -V SD ,Source-to-Drain Voltage (V) -IS(A) T j =25 o C T j =150 o C 1.5 2.5 -50 100 150 T j ,Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃ ℃/W 0.02 0.01 0.1 100 0.1 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 100 1000 10000 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-5A V DS =-15V td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge