AP9928GEM

AP9928GEM A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low on-resistance BVDSS 20V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 23mΩ ▼ ▼ ▼ ▼ Surface mount package ID 7.3A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Thermal Data Parameter 200121051 Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Total Power Dissipation 2 Linear Derating Factor 0.016 Continuous Drain Current3 5.8 Pulsed Drain Current1 30 Gate-Source Voltage ±12 Continuous Drain Current3 7.3 Parameter Rating Drain-Source Voltage 20 AP9928GEM Pb Free Plating Product The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 G1 SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=7A - - 23 mΩ VGS=2.5V, ID=5A - - 32 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - - V gfs Forward Transconductance V DS=5V, ID=7A - 18 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±12V - - ±10 uA Qg Total Gate Charge2 ID=7A - 17 27 nC Qgs Gate-Source Charge V DS=16V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=10V - 12 - ns tr Rise Time I D=1A - 17 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 32 - ns tf Fall Time R D=10Ω -1 7 - ns Ciss Input Capacitance V GS=0V - 500 800 pF Coss Output Capacitance V DS=20V - 260 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF Rg Gate Resistance f=1.0MHz - 2.8 4.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=7A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 28 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP9928GEM

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP9928GEM 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 4.5V 3.5 V 3.0 V 2.5V V G =2.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C V G = 2.0 V 4.5V 3.5 V 3.0 V 2.5V 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G = 4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =5A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9928GEM Q VG 4.5V QGS QGD QG Charge 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 0V V DS =1 2V V DS =1 6 V I D =7A 100 1000 10000 1 4 7 1 01 31 61 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms 10s DC